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Surface-polarity-dependent Raman spectra of ultrathin silicon carbide crystal

Applied physics. A, Materials science & processing, 2023-06, Vol.129 (6), Article 420

2023

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Raman characterization of damaged layers of 4H-SiC induced by scratching

AIP advances, 2016-01, Vol.6 (1), p.015207-015207-8

2016

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Dynamics of coherent anharmonic phonons in bismuth using high density photoexcitation

Physical review letters, 2002-02, Vol.88 (6), p.067401-067401, Article 067401

2002

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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

Applied Optics, 1997-10, Vol.36 (30), p.7853

1997

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Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

Journal of applied physics, 2012-08, Vol.112 (4)

2012

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Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC

Journal of applied physics, 1995-08, Vol.78 (3), p.1996-2005

1995

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Raman Scattering Characterization of Polytype in Silicon Carbide Ceramics: Comparison with X-ray Diffraction

Journal of the American Ceramic Society, 2003-05, Vol.86 (5), p.823-829

2003

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Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas

Optics express, 2004-06, Vol.12 (13), p.2954-2959

2004

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Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt

Materials letters, 2009-03, Vol.63 (8), p.649-651

2009

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Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors

Applied spectroscopy, 2004-02, Vol.58 (2), p.224-229

2004

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Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

Applied physics letters, 2005-12, Vol.87 (24), p.241906-241906-3

2005

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Structure Dependent Ultrafast Relaxation Time of Photo-excited Carriers in SiC

Journal of the Physical Society of Japan, 2004-09, Vol.73 (9), p.2554-2561

2004

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Ultrashort electromagnetic pulse radiation from YBCO thin films excited by femtosecond optical pulse

Japanese Journal of Applied Physics, 1996-05, Vol.35 (5A), p.2624-2632

1996

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Forcibly driven coherent soft phonons in GeTe with intense THz-rate pump fields

Applied physics letters, 2003-12, Vol.83 (24), p.4921-4923

2003

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Selective Enhancement of Coherent Optical Phonons Using THz-rate Pulse Train

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3A), p.L281

1998

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Hase et al. Reply

Physical review letters, 2004-08, Vol.93 (10), Article 109702

2004

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Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs

Physical review. B, Condensed matter, 1999-12, Vol.60 (24), p.16526-16530

1999

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Generation of coherent THz phonons in GeTe ferroelectrics

Journal of luminescence, 2000-05, Vol.87, p.836-839

2000

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Determination of crystallographic orientations in silicon films by Raman-microprobe polarization measurements

Journal of applied physics, 1989-04, Vol.65 (7), p.2583-2590

1989

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Near-band-edge photoluminescence of GaAs epitaxial layers grown at low temperature

Japanese Journal of Applied Physics, 1997-02, Vol.36 (2), p.623-628

1997

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Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

Journal of crystal growth, 1998-06, Vol.189, p.435-438

1998

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Dynamics of coherent phonons in bismuth generated by ultrashort laser pulses

Physical review. B, Condensed matter, 1998-09, Vol.58 (9), p.5448-5452

1998

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Characterization of 3C-SiC epitaxial layers on TiC(111) by Raman scattering

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5525-5531

1997

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Effect of Radiation in Solid during SiC Sublimation Growth

MRS proceedings, 2006, Vol.911, Article 0911-B01-02

2006

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Characterization of crystallinity in low-temperature-grown GaAs layers by Raman scattering and time-resolved photoreflectance measurements

Japanese Journal of Applied Physics, 1996-12, Vol.35 (12A), p.5955-5963

1996

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Surface-polarity-dependent Raman spectra of ultrathin silicon carbide crystal

Raman characterization of damaged layers of 4H-SiC induced by scratching

Dynamics of coherent anharmonic phonons in bismuth using high density photoexcitation

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC

Raman Scattering Characterization of Polytype in Silicon Carbide Ceramics: Comparison with X-ray Diffraction

Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas

Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt

Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

Structure Dependent Ultrafast Relaxation Time of Photo-excited Carriers in SiC

Ultrashort electromagnetic pulse radiation from YBCO thin films excited by femtosecond optical pulse

Forcibly driven coherent soft phonons in GeTe with intense THz-rate pump fields

Selective Enhancement of Coherent Optical Phonons Using THz-rate Pulse Train

Hase et al. Reply

Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs

Generation of coherent THz phonons in GeTe ferroelectrics

Determination of crystallographic orientations in silicon films by Raman-microprobe polarization measurements

Near-band-edge photoluminescence of GaAs epitaxial layers grown at low temperature

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

Dynamics of coherent phonons in bismuth generated by ultrashort laser pulses

Characterization of 3C-SiC epitaxial layers on TiC(111) by Raman scattering

Effect of Radiation in Solid during SiC Sublimation Growth

Characterization of crystallinity in low-temperature-grown GaAs layers by Raman scattering and time-resolved photoreflectance measurements

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