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High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2221-2227

2001

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A signal-processing CMOS image sensor using a simple analog operation

IEEE journal of solid-state circuits, 2003-01, Vol.38 (1), p.101-106

2003

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A 1/3-in 1.3 M-pixel single-layer electrode CCD with a high-frame-rate skip mode

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1915-1921

2001

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A signal-processing CMOS image sensor using a simple analog operation

2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), 2001, p.98-99

2001

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Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1566-1572

2000

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A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1922-1928, Article 1922

2001

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Device technology for body biasing scheme

2005 IEEE International Symposium on Circuits and Systems (ISCAS), 2005, p.13-16 Vol. 1

2005

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A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.222-230

2001

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A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-μm gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

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A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-frame-rate skip mode

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2000

2000

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Cyclization into Hydrindanones Using Samarium Diiodide

Journal of organic chemistry, 2000-05, Vol.65 (10), p.3099-3106

2000

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Translational Lemmas for Alternating TMs and PRAMs

Fundamentals of Computation Theory, 2005, p.137-148

2005

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A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012, p.363-366

2012

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A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.50-57

1995

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Samarium(II) Iodide-mediated Intramolecular Aldol-type Cyclization

Heterocycles, 2001, Vol.54 (1), p.101

2001

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Syntheses of isocitric acid derivatives and biological evaluation

Tetrahedron letters, 2000-04, Vol.41 (17), p.3095-3098

2000

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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1700-1706

2000

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A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing0.25-mu m gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

Volltextzugriff (PDF)

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

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High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.701-704

2000

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Exciplex emission from amphiphilic polysilanes bearing ammonium moieties

Journal of nuclear materials, 1997-09, Vol.248, p.369-373

1997

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Development of a CMOS imager LSI with focal-plane motion detectors

Electronics & communications in Japan. Part 2, Electronics, 2001-09, Vol.84 (9), p.28-35

2001

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Optimization of metal layers and substrate loss for the 3D solenoid structure inductors

2012 Asia Pacific Microwave Conference Proceedings, 2012, p.1268-1270

2012

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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.41-44

1998

Volltextzugriff (PDF)

Development of a CMOS imager LSI with focal‐plane motion detectors

Electronics & communications in Japan. Part 2, Electronics, 2001-01, Vol.84 (9), p.28-35

2001

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High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

A signal-processing CMOS image sensor using a simple analog operation

A 1/3-in 1.3 M-pixel single-layer electrode CCD with a high-frame-rate skip mode

A signal-processing CMOS image sensor using a simple analog operation

Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

Device technology for body biasing scheme

A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-μm gap single-layer poly-Si electrodes

A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-frame-rate skip mode

Cyclization into Hydrindanones Using Samarium Diiodide

Translational Lemmas for Alternating TMs and PRAMs

A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

Samarium(II) Iodide-mediated Intramolecular Aldol-type Cyclization

Syntheses of isocitric acid derivatives and biological evaluation

Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing0.25-mu m gap single-layer poly-Si electrodes

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes

High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

Exciplex emission from amphiphilic polysilanes bearing ammonium moieties

Development of a CMOS imager LSI with focal-plane motion detectors

Optimization of metal layers and substrate loss for the 3D solenoid structure inductors

Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

Development of a CMOS imager LSI with focal‐plane motion detectors

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