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ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts

2012 Symposium on VLSI Technology (VLSIT), 2012, p.83-84

2012

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Epi defined (ED) FinFET: An alternate device architecture for high mobility Ge channel integration in PMOSFET

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.367-370

2013

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Performance Improvement of One-Transistor DRAM by Band Engineering

IEEE electron device letters, 2012-01, Vol.33 (1), p.29-31

2012

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Electrical Characterization of GaP-Silicon Interface for Memory and Transistor Applications

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2238-2245

2013

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Optimization of the \hbox\hbox/ \hbox Interface and a High-Mobility GaSb pMOSFET

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3407-3415

2011

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Improved Nitridation of GeO2 Interfacial layer for Ge Gate Stack Technology

MRS proceedings, 2013, Vol.1561 (1)

2013

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Improved Nitridation of GeO 2 Interfacial layer for Ge Gate Stack Technology

MRS proceedings, 2013, Vol.1561, Article mrss13-1561-cc04-10

2013

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Epi Defined (ED) FinFET with dynamic threshold: Reduced VT variability, enhanced performance, and a novel Multiple VT

2013 Annual IEEE India Conference (INDICON), 2013, p.1-4

2013

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Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs

72nd Device Research Conference, 2014, p.235-236

2014

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Design and optimization of next generation high aspect ratio periodic thin film photovoltaic cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.000848-000851

2011

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Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VT

70th Device Research Conference, 2012, p.127-128

2012

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Tight-binding study of Γ-L bandstructure engineering for ballistic III-V nMOSFETs

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.71-74

2011

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GeSn technology: Extending the Ge electronics roadmap

2011 International Electron Devices Meeting, 2011, p.16.6.1-16.6.4

2011

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Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs

69th Device Research Conference, 2011, p.143-144

2011

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Improving Quality of Service in MAC 802.11 Layer

2007 15th International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunication Systems, 2007, p.38-45

2007

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Experimental demonstration of high mobility Ge NMOS

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Cryo implanted high performance n+/p junctions in Ge for future CMOS

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014, p.1-2

2014

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Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks

2012 International Electron Devices Meeting, 2012, p.18.3.1-18.3.4

2012

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Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2007, p.197-201

2007

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Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, p.1-2

2012

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Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium

2010 International Electron Devices Meeting, 2010, p.6.4.1-6.4.4

2010

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Engineering of strained III-V heterostructures for high hole mobility

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Hole band anisotropy effect on ON-state performance of biaxial compressive strained SiGe-based short channel QW pMOSFETs: Experimental observations

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.126-127

2010

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ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts

Epi defined (ED) FinFET: An alternate device architecture for high mobility Ge channel integration in PMOSFET

Performance Improvement of One-Transistor DRAM by Band Engineering

Electrical Characterization of GaP-Silicon Interface for Memory and Transistor Applications

Optimization of the \hbox\hbox/ \hbox Interface and a High-Mobility GaSb pMOSFET

Improved Nitridation of GeO2 Interfacial layer for Ge Gate Stack Technology

Improved Nitridation of GeO 2 Interfacial layer for Ge Gate Stack Technology

Epi Defined (ED) FinFET with dynamic threshold: Reduced VT variability, enhanced performance, and a novel Multiple VT

Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors

Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs

Design and optimization of next generation high aspect ratio periodic thin film photovoltaic cells

Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VT

Tight-binding study of Γ-L bandstructure engineering for ballistic III-V nMOSFETs

GeSn technology: Extending the Ge electronics roadmap

Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs

Improving Quality of Service in MAC 802.11 Layer

Experimental demonstration of high mobility Ge NMOS

Cryo implanted high performance n+/p junctions in Ge for future CMOS

Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks

Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation

Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors

Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium

Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium

Engineering of strained III-V heterostructures for high hole mobility

Hole band anisotropy effect on ON-state performance of biaxial compressive strained SiGe-based short channel QW pMOSFETs: Experimental observations

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