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Identifying gaps in COVID-19 health equity data reporting in Canada using a scorecard approach

Canadian journal of public health, 2021-06, Vol.112 (3), p.352-362

2021

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Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Materials science forum, 2011-03, Vol.679-680, p.595-598

2011

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The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2046-2053

2008

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Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

Materials science forum, 2012-05, Vol.717-720, p.953-956

2012

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Does the risk of emergency department visits and hospitalizations during systemic therapy for cancer influence patient decisions regarding treatment?

Journal of clinical oncology, 2018-10, Vol.36 (30_suppl), p.213-213

2018

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Does the risk of emergency department visits and hospitalizations during systemic therapy for cancer influence patients’ decisions regarding treatment?

Journal of clinical oncology, 2018-05, Vol.36 (15_suppl), p.e18803-e18803

2018

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The impact of interruptions on physician workflow, productivity, and delivery of care

Journal of clinical oncology, 2017-03, Vol.35 (8_suppl), p.201-201

2017

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4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Materials science forum, 2014-02, Vol.778-780, p.607-610

2014

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Advancing Allyship Through Anti-Oppression Workshops for Public Health Students: A Mixed Methods Pilot Evaluation

Pedagogy in health promotion, 2021-12, Vol.7 (4), p.304-312

2021

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Evaluating Patients' Perception of the Risk of Acute Care Visits During Systemic Therapy for Cancer

JCO oncology practice, 2020-07, Vol.16 (7), p.e622-e629

2020

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Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC

Materials science forum, 2014-02, Vol.778-780, p.467-470

2014

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Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Materials science forum, 2011, Vol.679-680, p.678-681

2011

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CRYOGENIC OPERATION OF GaN SCHOTTKY RECTIFIERS

International journal of high speed electronics, 2011-09, Vol.20 (3), p.457-461

2011

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Study of Electrical Properties of 4Hydrogen-Silicon Carbide/Silicon Dioxide Interface

Naik, Harsh

2013

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Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Materials science forum, 2009-01, Vol.615-617, p.773-776

2009

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Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2433-2435

2011

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Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors

Materials science forum, 2012, Vol.717-720, p.769-772

2012

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High-low temperature performance of GaN 600 V Schottky rectifiers

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2219-2222

2011

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Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

Materials science forum, 2010-04, Vol.645-648, p.519-522

2010

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Design of GaN and SiC 5-20kV vertical superjunction structures

2012 Lester Eastman Conference on High Performance Devices (LEC), 2012, p.1-4

2012

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Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

Materials science forum, 2009-01, Vol.615-617, p.785-788

2009

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The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes : Silicon carbide devices and technology

IEEE transactions on electron devices, 2008, Vol.55 (8), p.2046-2053

2008

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CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4 H - SiC VERTICAL POWER MOSFET

International journal of high speed electronics, 2009-03, Vol.19 (1), p.167-172

2009

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EFFECT OF GATE OXIDE PROCESSES ON 4 H - SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE

International journal of high speed electronics, 2009-03, Vol.19 (1), p.161-166

2009

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Comparison of AC I-V characteristic of Si and SiC MOSFETs

2012 Lester Eastman Conference on High Performance Devices (LEC), 2012, p.1-4

2012

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Identifying gaps in COVID-19 health equity data reporting in Canada using a scorecard approach

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

Does the risk of emergency department visits and hospitalizations during systemic therapy for cancer influence patient decisions regarding treatment?

Does the risk of emergency department visits and hospitalizations during systemic therapy for cancer influence patients’ decisions regarding treatment?

The impact of interruptions on physician workflow, productivity, and delivery of care

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Advancing Allyship Through Anti-Oppression Workshops for Public Health Students: A Mixed Methods Pilot Evaluation

Evaluating Patients' Perception of the Risk of Acute Care Visits During Systemic Therapy for Cancer

Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

CRYOGENIC OPERATION OF GaN SCHOTTKY RECTIFIERS

Study of Electrical Properties of 4Hydrogen-Silicon Carbide/Silicon Dioxide Interface

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors

High-low temperature performance of GaN 600 V Schottky rectifiers

Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

Design of GaN and SiC 5-20kV vertical superjunction structures

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes : Silicon carbide devices and technology

CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4 H - SiC VERTICAL POWER MOSFET

EFFECT OF GATE OXIDE PROCESSES ON 4 H - SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE

Comparison of AC I-V characteristic of Si and SiC MOSFETs

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