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Erlotinib-Induced Cardiomyopathy in a Patient with Metastatic Non-Small Cell Lung Cancer

International Heart Journal, 2021/09/29, Vol.62(5), pp.1171-1175

2021

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Cardiology consultation in oncology practice: a 5-year survey

Japanese journal of clinical oncology, 2020-12, Vol.50 (12), p.1419-1425

2020

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Rationale, Design, and Feasibility of a Prospective Multicenter Registry Study of Anthracycline-Induced Cardiotoxicity (AIC Registry)

Journal of clinical medicine, 2021-03, Vol.10 (7), p.1370

2021

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Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

ACS nano, 2015-01, Vol.9 (1), p.916-921

2015

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Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

Advanced functional materials, 2019-12, Vol.29 (49), p.n/a

2019

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Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

ACS applied materials & interfaces, 2016-10, Vol.8 (41), p.27877-27884

2016

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Electrically Inert h‑BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS applied materials & interfaces, 2018-08, Vol.10 (34), p.28780-28788

2018

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Determination of Carrier Polarity in Fowler–Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface

ACS applied materials & interfaces, 2018-04, Vol.10 (14), p.11732-11738

2018

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Quantitative Determination of Contradictory Bandgap Values of Bulk PdSe2 from Electrical Transport Properties

Advanced functional materials, 2022-02, Vol.32 (9), p.n/a

2022

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Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

ACS nano, 2021-04, Vol.15 (4), p.6658-6668

2021

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Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Small (Weinheim an der Bergstrasse, Germany), 2020-11, Vol.16 (47), p.e2004907-n/a

2020

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Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h‑BN

ACS applied materials & interfaces, 2022-06, Vol.14 (22), p.25659-25669

2022

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Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

ACS nano, 2020-06, Vol.14 (6), p.6834-6844

2020

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All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.51598-51606

2020

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Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes

Applied physics express, 2019-05, Vol.12 (5), p.55008

2019

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Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

Applied physics letters, 2016-12, Vol.109 (25)

2016

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Current Injection into Single-Crystalline Carbon-Doped h‑BN toward Electronic and Optoelectronic Applications

ACS applied materials & interfaces, 2022-06, Vol.14 (22), p.25731-25740

2022

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Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Applied physics letters, 2024-06, Vol.124 (26)

2024

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p‑Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

ACS applied materials & interfaces, 2023-06, Vol.15 (22), p.26977-26984

2023

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Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction

ACS applied materials & interfaces, 2024-02, Vol.16 (7), p.8993-9001

2024

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Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction

ACS applied materials & interfaces, 2024-02, Vol.16 (7), p.8993-9001

2024

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p-Type Conversion of WS 2 and WSe 2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

ACS applied materials & interfaces, 2023-06, Vol.15 (22), p.26977-26984

2023

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Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

Advanced functional materials, 2019-12, Vol.29 (49)

2019

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From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices

Advanced electronic materials, 2023-08, Vol.9 (8), p.n/a

2023

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Quantitative Determination of Contradictory Bandgap Values of Bulk PdSe 2 from Electrical Transport Properties

Advanced functional materials, 2022-02, Vol.32 (9)

2022

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Erlotinib-Induced Cardiomyopathy in a Patient with Metastatic Non-Small Cell Lung Cancer

Cardiology consultation in oncology practice: a 5-year survey

Rationale, Design, and Feasibility of a Prospective Multicenter Registry Study of Anthracycline-Induced Cardiotoxicity (AIC Registry)

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Electrically Inert h‑BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

Determination of Carrier Polarity in Fowler–Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface

Quantitative Determination of Contradictory Bandgap Values of Bulk PdSe2 from Electrical Transport Properties

Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h‑BN

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes

Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

Current Injection into Single-Crystalline Carbon-Doped h‑BN toward Electronic and Optoelectronic Applications

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

p‑Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction

Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction

p-Type Conversion of WS 2 and WSe 2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices

Quantitative Determination of Contradictory Bandgap Values of Bulk PdSe 2 from Electrical Transport Properties

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