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Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2833-2837

2018

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High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application

IEEE electron device letters, 2014-06, Vol.35 (6), p.642-644

2014

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An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3289-3295

2014

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Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11), p.111401-1-111401-5

2014

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Conduction mechanism in amorphous InGaZnO thin film transistors

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1), p.14301

2016

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Power saving through state retention in IGZO‐TFT AMOLED displays for wearable applications

Journal of the Society for Information Display, 2017-04, Vol.25 (4), p.222-228

2017

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Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs

Organic electronics, 2011-11, Vol.12 (11), p.1909-1913

2011

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Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications

Journal of the Society for Information Display, 2013-03, Vol.21 (3), p.129-136

2013

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Low-temperature formation of source-drain contacts in self-aligned amorphous oxide thin-film transistors

Journal of Information Display, 2015, 16(2), , pp.111-118

2015

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Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

Journal of the Society for Information Display, 2013-09, Vol.21 (9), p.369-375

2013

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Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

Solid-state electronics, 2022-09, Vol.195, p.108406, Article 108406

2022

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Analysis of frequency dispersion in amorphous In-Ga-Zn-O thin-film transistors

Journal of Information Display, 2015, 16(1), , pp.31-36

2015

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2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal-Oxide TFTs

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4861-4867

2018

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Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.302-304

2014

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Gigahertz Operation of a-IGZO Schottky Diodes

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3407-3412

2013

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High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al 2 O 3 as High-κ Gate Dielectric

IEEE electron device letters, 2020-04, Vol.41 (4), p.565-568

2020

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Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Applied physics letters, 2014-02, Vol.104 (8)

Gielen Georges

2014

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Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.514-519

2018

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Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors with Al2O3 as High-К Gate Dielectric

IEEE electron device letters, 2020-02, p.1-1

2020

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Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control

Journal of the Society for Information Display, 2017-06, Vol.25 (6), p.349-355

2017

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Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

IEEE electron device letters, 2020-04, Vol.41 (4), p.565

2020

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Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

Microelectronics and reliability, 2020-05, Vol.108, p.113632, Article 113632

2020

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An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2717-2722

2021

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Systematic Study on the Amorphous, C‑Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

ACS applied electronic materials, 2021-03, Vol.3 (3), p.1268-1278

2021

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Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs

High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application

An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

Conduction mechanism in amorphous InGaZnO thin film transistors

Power saving through state retention in IGZO‐TFT AMOLED displays for wearable applications

Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs

Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications

Low-temperature formation of source-drain contacts in self-aligned amorphous oxide thin-film transistors

Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

Analysis of frequency dispersion in amorphous In-Ga-Zn-O thin-film transistors

2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal-Oxide TFTs

Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors

Gigahertz Operation of a-IGZO Schottky Diodes

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al 2 O 3 as High-κ Gate Dielectric

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors with Al2O3 as High-К Gate Dielectric

Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

Systematic Study on the Amorphous, C‑Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

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