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GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

Electronics letters, 2015-10, Vol.51 (20), p.1602-1604

2015

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InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency

Electronics letters, 2017-02, Vol.53 (3), p.173-175

2017

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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Electronics letters, 2009, Vol.45 (10), p.501

2009

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Control of emission spectra in quantum dot microdisk/microring lasers

Optics express, 2014-10, Vol.22 (21), p.25782-25787

2014

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[Ga.sub.0.2]As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.870

2018

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Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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Bimodality in Arrays of [In.sub.0.4][Ga.sub.0.6]As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.53

2018

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Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots

Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki, 2022-10, Vol.22 (5), p.921-928

2022

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InAs QDs in a metamorphic [In.sub.0.25][Ga.sub.0.75]As matrix, grown by MOCVD

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.672

2017

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Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1186-1190

2016

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Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.357-362, Article 357

2017

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Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1111-1118

2015

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TEM Analysis of InGaAs/GaAs Quantum Well-Quantum Dot Structures for Optoelectronics Applications

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.1256-1257

2016

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Optical properties of hybrid quantum-confined structures with high absorbance

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1180-1185

2016

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Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1090-1094

2015

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Multilayer quantum-dot arrays of high bulk density

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1452-1455

2014

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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

Semiconductors (Woodbury, N.Y.), 2013-07, Vol.47 (7), p.993-996

2013

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Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.77-82

2014

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High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.695-700

2013

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Spectral dependence of the linewidth enhancement factor in quantum dot lasers

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1656-1660

2013

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Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

Semiconductors (Woodbury, N.Y.), 2011-05, Vol.45 (5), p.679-684

2011

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Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1097-1102

2013

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Optical properties of epitaxial InAs/GaAs quantum dots overgrown under different V/III flux ratios

2024 International Conference Laser Optics (ICLO), 2024, p.358-358

2024

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Optical anisotropy of InGaAs quantum dots

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.85-89

2013

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Dynamics of lasing switching between the ground and excited-state in a quantum-dot microdisk

2024 International Conference Laser Optics (ICLO), 2024, p.113-113

2024

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GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Control of emission spectra in quantum dot microdisk/microring lasers

[Ga.sub.0.2]As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties

Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots

Bimodality in Arrays of [In.sub.0.4][Ga.sub.0.6]As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates

Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots

InAs QDs in a metamorphic [In.sub.0.25][Ga.sub.0.75]As matrix, grown by MOCVD

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

TEM Analysis of InGaAs/GaAs Quantum Well-Quantum Dot Structures for Optoelectronics Applications

Optical properties of hybrid quantum-confined structures with high absorbance

Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Multilayer quantum-dot arrays of high bulk density

Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

Spectral dependence of the linewidth enhancement factor in quantum dot lasers

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

Optical properties of epitaxial InAs/GaAs quantum dots overgrown under different V/III flux ratios

Optical anisotropy of InGaAs quantum dots

Dynamics of lasing switching between the ground and excited-state in a quantum-dot microdisk

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