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A linkage and exome study implicates rare variants of KANK4 and CAP2 in bipolar disorder in a multiplex family

Bipolar disorders, 2020-02, Vol.22 (1), p.70-78

2020

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Exome sequencing in families with severe mental illness identifies novel and rare variants in genes implicated in Mendelian neuropsychiatric syndromes

Psychiatry and clinical neurosciences, 2019-01, Vol.73 (1), p.11-19

2019

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Identification and functional characterization of two novel mutations in KCNJ10 and PI4KB in SeSAME syndrome without electrolyte imbalance

Human genomics, 2019-10, Vol.13 (1), p.53-53, Article 53

2019

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Complexities in Genetic Counseling and Testing of Huntington's Disease: A Perspective from India

Neurology India, 2022-09, Vol.70 (5), p.2141-2144

2022

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Abnormalities in the migration of neural precursor cells in familial bipolar disorder

Disease models & mechanisms, 2022-10, Vol.15 (10)

2022

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BDNF gene and obsessive compulsive disorder risk, symptom dimensions and treatment response

Asian journal of psychiatry, 2018-12, Vol.38, p.65-69

2018

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Reproducibility of Cell Structure and Mechanical Properties of Al-Si-Mg/SiCP Composite Foams in Relation to the Foaming Temperature

Journal of materials engineering and performance, 2023-08, Vol.32 (15), p.7063-7071

2023

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High-resistance layers in n -type 4H-silicon carbide by hydrogen ion implantation

Applied physics letters, 1997-02, Vol.70 (7), p.886-888

1997

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Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation

Journal of applied physics, 1993-06, Vol.73 (11), p.7238-7243

1993

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Be+/P+, Be+/Ar+, and Be+/N+ coimplantations into InP:Fe

Journal of applied physics, 1990-02, Vol.67 (4), p.1761-1766

1990

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MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP

Journal of applied physics, 1993-02, Vol.73 (3), p.1126-1132

1993

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Elevated-temperature 3-MeV Si and 150-keV Ge implants in InP : Fe

Journal of applied physics, 1992, Vol.71 (1), p.126-132

1992

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MeV B compensation implants into n-type GaAs and InP

Journal of applied physics, 1992-09, Vol.72 (6), p.2179-2184

1992

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Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

Journal of electronic materials, 1993-01, Vol.22 (1), p.73-80

1993

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Highly conductive buried n super(+) layers in InP:Fe created by MeV energy Si, S, and Si/S implantation of application to microwave devices

Journal of electronic materials, 1993-01, Vol.22 (1), p.73-80

1993

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High-energy Si implantation into InP:Fe

Journal of applied physics, 1991-08, Vol.70 (3), p.1750-1757

1991

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DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe

IEEE electron device letters, 1992-09, Vol.13 (9), p.473-475

1992

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0.4-3.0-MeV-range Be-ion implantations into InP:Fe

Journal of applied physics, 1991-09, Vol.70 (6), p.2973-2978

1991

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Rutherford backscattering studies on high-energy Si-implanted InP

Journal of electronic materials, 1991-10, Vol.20 (8), p.615-619

1991

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10-20 MeV energy range Si implantations into InP:Fe

Journal of applied physics, 1991-12, Vol.70 (11), p.7188-7190

1991

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MeV energy sulfur implantation in GaAs and InP

Journal of electronic materials, 1993-05, Vol.22 (5), p.559-566

1993

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Fe and Ti implants in In0.52Al0.48As

Journal of electronic materials, 1993-09, Vol.22 (9), p.1153-1157

1993

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Fe and Ti implants in In sub(0.52)Al sub(0.48)As

Journal of electronic materials, 1993-01, Vol.22 (9), p.1153-1157

1993

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Implantation of high-energy Si and Be ions in InP and low-energy transition metal ions in InGaAs

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, p.260-263

1991

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Vertical InP pin diode made by MeV energy Si implantation

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.377-380

1992

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A linkage and exome study implicates rare variants of KANK4 and CAP2 in bipolar disorder in a multiplex family

Exome sequencing in families with severe mental illness identifies novel and rare variants in genes implicated in Mendelian neuropsychiatric syndromes

Identification and functional characterization of two novel mutations in KCNJ10 and PI4KB in SeSAME syndrome without electrolyte imbalance

Complexities in Genetic Counseling and Testing of Huntington's Disease: A Perspective from India

Abnormalities in the migration of neural precursor cells in familial bipolar disorder

BDNF gene and obsessive compulsive disorder risk, symptom dimensions and treatment response

Reproducibility of Cell Structure and Mechanical Properties of Al-Si-Mg/SiCP Composite Foams in Relation to the Foaming Temperature

High-resistance layers in n -type 4H-silicon carbide by hydrogen ion implantation

Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation

Be+/P+, Be+/Ar+, and Be+/N+ coimplantations into InP:Fe

MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP

Elevated-temperature 3-MeV Si and 150-keV Ge implants in InP : Fe

MeV B compensation implants into n-type GaAs and InP

Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

Highly conductive buried n super(+) layers in InP:Fe created by MeV energy Si, S, and Si/S implantation of application to microwave devices

High-energy Si implantation into InP:Fe

DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe

0.4-3.0-MeV-range Be-ion implantations into InP:Fe

Rutherford backscattering studies on high-energy Si-implanted InP

10-20 MeV energy range Si implantations into InP:Fe

MeV energy sulfur implantation in GaAs and InP

Fe and Ti implants in In0.52Al0.48As

Fe and Ti implants in In sub(0.52)Al sub(0.48)As

Implantation of high-energy Si and Be ions in InP and low-energy transition metal ions in InGaAs

Vertical InP pin diode made by MeV energy Si implantation

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