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Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors

Current applied physics, 2024-09, Vol.65, p.91-95

Na, Junhong

2024

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Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Increasing the thermoelectric power generated by composite films using chemically functionalized single-walled carbon nanotubes

Carbon (New York), 2013-10, Vol.62, p.430-437

2013

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Self-heating Characteristics of Mo Electrodes and MoS2 FET Using IR Thermal Imaging Microscope

Journal of the Korean Physical Society, 2020, 76(6), , pp.502-505

2020

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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

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Induction heating effect on the performance of flexible MoS2 field-effect transistors

Applied physics letters, 2017-10, Vol.111 (15)

2017

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Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

NPJ 2D materials and applications, 2021-01, Vol.5 (1), p.1-9, Article 4

2021

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Resistive switching characteristics of polycrystalline SrTiO3 films

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Photoconductance of aligned SnO2 nanowire field effect transistors

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

ACS applied materials & interfaces, 2011-08, Vol.3 (8), p.3097-3102

2011

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Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

Nanotechnology, 2013-11, Vol.24 (45), p.455701-455701

2013

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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Thin solid films, 2014-05, Vol.558, p.279-282

2014

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Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

ACS nano, 2014-11, Vol.8 (11), p.11753-11762

2014

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Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure

ACS applied materials & interfaces, 2019-06, Vol.11 (23), p.20973-20978

2019

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Understanding the Space-Charge Layer in SnO2 for Enhanced Electron Extraction in Hybrid Perovskite Solar Cells

ACS applied materials & interfaces, 2022-10, Vol.14 (42), p.48229-48239

2022

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Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4), p.46503-1-046503-6

2014

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Air-stable few-layer black phosphorus phototransistor for near-infrared detection

Nanotechnology, 2017-02, Vol.28 (8), p.085201-085201

2017

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

ACS applied materials & interfaces, 2019-01, Vol.11 (4), p.4226-4232

2019

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Distinctive Photo‐Induced Memory Effect in Heterostructure of 2D Van Der Waals Materials and Lanthanum Aluminate

Advanced optical materials, 2022-08, Vol.10 (16), p.n/a

2022

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Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating

Nanoscale, 2016-11, Vol.8 (44), p.18703-18709

2016

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Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe 2 Heterostructure

ACS applied materials & interfaces, 2019-06, Vol.11 (23), p.20973-20978

2019

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Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Advanced functional materials, 2021-06, Vol.31 (23), p.n/a

2021

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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Advanced materials (Weinheim), 2019-02, Vol.31 (6), p.e1805860-n/a

2019

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Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.42912-42918

2017

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Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors

Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Increasing the thermoelectric power generated by composite films using chemically functionalized single-walled carbon nanotubes

Self-heating Characteristics of Mo Electrodes and MoS2 FET Using IR Thermal Imaging Microscope

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Induction heating effect on the performance of flexible MoS2 field-effect transistors

Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Resistive switching characteristics of polycrystalline SrTiO3 films

Photoconductance of aligned SnO2 nanowire field effect transistors

Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure

Understanding the Space-Charge Layer in SnO2 for Enhanced Electron Extraction in Hybrid Perovskite Solar Cells

Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

Air-stable few-layer black phosphorus phototransistor for near-infrared detection

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

Distinctive Photo‐Induced Memory Effect in Heterostructure of 2D Van Der Waals Materials and Lanthanum Aluminate

Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe 2 Heterostructure

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

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