UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2935-2943

2014

Volltextzugriff (PDF)

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

Volltextzugriff (PDF)

Fabrication and characterization of 4H-SiC planar MESFETs

Microelectronic engineering, 2006, Vol.83 (1), p.160-164

2006

Volltextzugriff (PDF)

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Materials science forum, 2007-09, Vol.556-557, p.763-766

2007

Volltextzugriff (PDF)

Characterization of Undoped and Nitrogen-Doped 4H-SiC Thin Films by CVD from Bis(trimethylsilylmethane) Precursor

Journal of the Electrochemical Society, 2004, Vol.151 (4), p.G252

2004

Volltextzugriff (PDF)

Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

Volltextzugriff (PDF)

Homoepitaxial Growth of Iron-Doped 4H-SiC by Using Bis-trimethylsilylmethane and Ferrocene Precursors

Journal of the Korean Physical Society, 2005, 47(3), , pp.508-511

2005

Volltextzugriff (PDF)

Homoepitaxial growth of 6H–SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor

Journal of crystal growth, 2000-03, Vol.210 (4), p.629-636

2000

Volltextzugriff (PDF)

Effect of annealing on electrical properties of Pt/β-SiC contact

Solid-state electronics, 2001-09, Vol.45 (9), p.1565-1570

2001

Volltextzugriff (PDF)

4H-SiC Planar MESFET for Microwave Power Device Applications

Journal of semiconductor technology and science, 2005, Vol.5 (2), p.113-119

2005

Volltextzugriff (PDF)

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

Materials science forum, 2006-10, Vol.527-529, p.1083-1086

2006

Volltextzugriff (PDF)

Low temperature hydrogen plasma treatment for the defect passivation in 4H-SiC

Journal of the Korean Physical Society, 2003, 43(51), , pp.914-917

2003

Volltextzugriff (PDF)

Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

Materials science forum, 2007-01, Vol.556-557, p.643-646

2007

Volltextzugriff (PDF)

Improved Ge Surface Passivation With Ultrathin SiO@@dX@ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

Volltextzugriff (PDF)

3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch

2022 International Electron Devices Meeting (IEDM), 2022, p.37.5.1-37.5.4

2022

Volltextzugriff (PDF)

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Materials science forum, 2007-01, Vol.556-557, p.113-116

2007

Volltextzugriff (PDF)

Surface acoustic wave propagation properties of 3C-SiC epitaxial films on Si(100)

1999 IEEE Ultrasonics Symposium. Proceedings. International Symposium (Cat. No.99CH37027), 1999, Vol.1, p.273-276 vol.1

1999

Volltextzugriff (PDF)

Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Solid state phenomena, 2007-06, Vol.124-126, p.109-112

2007

Volltextzugriff (PDF)

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Materials science forum, 2002-04, Vol.389-393, p.267-270

2002

Volltextzugriff (PDF)

Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

Thin solid films, 2000-12, Vol.377, p.567-572

2000

Volltextzugriff (PDF)

Improved Ge Surface Passivation With Ultrathin SiO sub(X) Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

IEEE electron device letters, 2007-01, Vol.28 (4)

2007

Volltextzugriff (PDF)

3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k / metal gate for hybrid orientation technology

2007 65th Annual Device Research Conference, 2007, p.53-54

2007

Volltextzugriff (PDF)

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma

Materials science forum, 2002-04, Vol.389-393, p.953-956

2002

Volltextzugriff (PDF)

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

Materials science forum, 2003-09, Vol.433-436, p.435-438

2003

Volltextzugriff (PDF)

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

Materials science forum, 2004-01, Vol.457-460, p.1181-1184

2004

Volltextzugriff (PDF)

1 – 25 von 44

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(39)
Mit Volltextzugriff
(40)

Publikationsform

Artikel
(39)
Tagungsberichte
(5)

Sprache

Englisch
(39)
Koreanisch
(5)

Erscheinungsjahr

n.n

Thema

Science & Technology
(28)
Technology
(20)
Materials Science
(16)
Materials Science, Multidisciplinary
(10)
Physics
(10)
Physical Sciences
(9)
Engineering
(6)
4h-Sic
(5)
Engineering, Electrical & Electronic
(5)
Exact Sciences And Technology
(5)
Life Sciences & Biomedicine
(5)
Physics, Applied
(5)
Btmsm
(4)
Science & Technology - Other Topics
(4)
Chemical Vapor Deposition
(3)
Cross-Disciplinary Physics: Materials Science; Rheology
(3)
Cvd
(3)
Devices
(3)
Germanium
(3)
Homoepitaxy
(3)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Fabrication and characterization of 4H-SiC planar MESFETs

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Characterization of Undoped and Nitrogen-Doped 4H-SiC Thin Films by CVD from Bis(trimethylsilylmethane) Precursor

Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

Homoepitaxial Growth of Iron-Doped 4H-SiC by Using Bis-trimethylsilylmethane and Ferrocene Precursors

Homoepitaxial growth of 6H–SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor

Effect of annealing on electrical properties of Pt/β-SiC contact

4H-SiC Planar MESFET for Microwave Power Device Applications

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

Low temperature hydrogen plasma treatment for the defect passivation in 4H-SiC

Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

Improved Ge Surface Passivation With Ultrathin SiO@@dX@ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Surface acoustic wave propagation properties of 3C-SiC epitaxial films on Si(100)

Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

Improved Ge Surface Passivation With Ultrathin SiO sub(X) Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k / metal gate for hybrid orientation technology

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

Suchergebnisse filtern