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A chemical method to graft carbon nanotubes onto a carbon fiber

Materials letters, 2008-02, Vol.62 (3), p.394-397

2008

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Photonic band gap structures in the Thue-Morse lattice

Physical review. B, Condensed matter and materials physics, 2007-05, Vol.75 (20), Article 205109

2007

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Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN

Physical review. B, Condensed matter, 2003-05, Vol.67 (20), Article 205210

2003

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Pinholes in multiple quantum well InxGa1-xN/GaN with low In concentration

Physica status solidi. C, 2006-06, Vol.3 (6), p.1815-1818

2006

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Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

稀有金属(英文版), 2006-12, Vol.25 (z2), p.15-19

2006

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Research on fabrication and properties of nanoporous GaN epilayers

Rare metals, 2006-12, Vol.25 (6), p.5-10

2006

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Microstructure analysis in strained-InGaN/GaN multiple quantum wells

Microelectronics, 2009-02, Vol.40 (2), p.342-345

2009

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Growth of high-quality thick GaN using a tungsten interlayer

Rare metals, 2006-12, Vol.25 (6), p.11-14

2006

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The methods to detect vacuum polarization by evanescent modes

Applied physics letters, 2011-08, Vol.99 (5), p.051112-051112-3

2011

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The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

Philosophical magazine (2003. Print), 2006-05, Vol.86 (15), p.2241-2269

2006

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TOPOLOGICAL LOCALISATION OF DEFECTS AT ATOMIC SCALE

Image analysis & stereology, 2002, Vol.21 (3), p.191-198

2002

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A chemical method to graft carbon nanotubes onto a carbon fiber

Materials letters, 2007-08, Vol.62, p.394-397

2007

Volltextzugriff (PDF)

Pinholes in multiple quantum well In x Ga 1–x N/GaN with low In concentration

Physica status solidi. C, 2006-06, Vol.3 (6), p.1815-1818

2006

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Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Thin solid films, 2008-04, Vol.516 (12), p.3772-3775

2008

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Structural analysis of thick GaN films grown by hydride vapour phase epitaxy

Physica Status Solidi (b), 2004-10, Vol.241 (12), p.2689-2692

2004

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Swift heavy ions effects in III–V nitrides

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-06, Vol.266 (12-13), p.2814-2818

2008

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Structural and Photoluminescence Study of Coevaporated CuInSe 2 /Si(100) Thin Films

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3R), p.1495

2006

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Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1541-1544

2006

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Composition and structure of NiTiCu shape memory thin films

Journal of micromechanics and microengineering, 2000-06, Vol.10 (2), p.147-151

2000

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Theoretical analysis of tilt grain boundaries in GaN at the atomic scale

MRS proceedings, 2002, Vol.743, Article L3.44

2002

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Atomic core structure of 90°(c)-bent screw threading dislocations in wurtzite GaN

稀有金属(英文版), 2006, Vol.25 (z2), p.1-4

2006

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Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.177-181

1999

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Atomic core structure of 90° ▪-bent screw threading dislocations in wurtzite GaN

Rare metals, 2006, Vol.25 (6), p.1-4

2006

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Effect of AIN intermediate layer on growing GaN film by hydride vapor phase epitaxy

Rare metals, 2006-12, Vol.25 (6), p.15-19

2006

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Atomic structure and energy of grain boundaries in GaN

Physica status solidi. C, 2003-12 (7), p.2436-2439

2003

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A chemical method to graft carbon nanotubes onto a carbon fiber

Photonic band gap structures in the Thue-Morse lattice

Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN

Pinholes in multiple quantum well InxGa1-xN/GaN with low In concentration

Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

Research on fabrication and properties of nanoporous GaN epilayers

Microstructure analysis in strained-InGaN/GaN multiple quantum wells

Growth of high-quality thick GaN using a tungsten interlayer

The methods to detect vacuum polarization by evanescent modes

The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

TOPOLOGICAL LOCALISATION OF DEFECTS AT ATOMIC SCALE

A chemical method to graft carbon nanotubes onto a carbon fiber

Pinholes in multiple quantum well In x Ga 1–x N/GaN with low In concentration

Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Structural analysis of thick GaN films grown by hydride vapour phase epitaxy

Swift heavy ions effects in III–V nitrides

Structural and Photoluminescence Study of Coevaporated CuInSe 2 /Si(100) Thin Films

Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

Composition and structure of NiTiCu shape memory thin films

Theoretical analysis of tilt grain boundaries in GaN at the atomic scale

Atomic core structure of 90°(c)-bent screw threading dislocations in wurtzite GaN

Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE

Atomic core structure of 90° ▪-bent screw threading dislocations in wurtzite GaN

Effect of AIN intermediate layer on growing GaN film by hydride vapor phase epitaxy

Atomic structure and energy of grain boundaries in GaN

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