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Zinc Oxide Quantum Rods

Journal of the American Chemical Society, 2004-05, Vol.126 (20), p.6206-6207

2004

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Zn-Se-Te multilayers with submonolayer quantities of Te : Type-II quantum structures and isoelectronic centers

Physical review. B, Condensed matter and materials physics, 2005, Vol.71 (4), p.045340.1-045340.4, Article 045340

2005

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Quantum confinement in ZnO nanorods

Applied physics letters, 2004-10, Vol.85 (17), p.3833-3835

2004

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Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

Solid state communications, 2005-06, Vol.134 (10), p.677-681

2005

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Time resolved photoluminescence studies of Zn-Se-Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.515-518

2004

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Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.527-530

2004

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Defects in wide band gap II-VI crystals

Materials science & engineering. R, Reports : a review journal, 1997-11, Vol.21 (1), p.iii,1-iv,46

Neumark, G.F.

1997

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Role of native defects in wide-band-gap semiconductors

Physical review letters, 1991-02, Vol.66 (5), p.648-651

1991

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Heavily p-type doped ZnSe using Te and N codoping

Journal of electronic materials, 2002-07, Vol.31 (7), p.799-801

2002

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Native defects and self-compensation in ZnSe

Physical review. B, Condensed matter, 1992-05, Vol.45 (19), p.10965-10978

1992

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High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be–Zn co-irradiation

Journal of crystal growth, 2000, Vol.208 (1), p.205-210

2000

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Modified donor–acceptor pair luminescence in heavily nitrogen-doped zinc selenide

Applied physics letters, 1995-11, Vol.67 (22), p.3307-3309

1995

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Acceptor doping in ZnSe versus ZnTe

Applied physics letters, 1993-09, Vol.63 (10), p.1375-1377

1993

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Wide bandgap light-emitting devices materials and doping problems

Materials letters, 1997-02, Vol.30 (2), p.131-135

Neumark, G.F.

1997

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Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se

Journal of luminescence, 2003-06, Vol.104 (1), p.77-83

2003

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The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

Applied physics letters, 1999-08, Vol.75 (9), p.1243-1245

1999

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Achievement of well conducting wide-band-gap semiconductors: role of solubility and nonequilibrium impurity incorporation

Physical review letters, 1989-04, Vol.62 (15), p.1800-1805

NEUMARK, G. F

1989

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First-principles calculations of solubilities and doping limits : Li, Na, and N in ZnSe

Physical review. B, Condensed matter, 1993-04, Vol.47 (15), p.9425-9434

1993

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Achievement of low-resistivity p-type ZnSe and the role of twinning

Journal of applied physics, 1989-06, Vol.65 (12), p.4859-4863

NEUMARK, G. F

1989

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Compensation in heavily N-doped ZnSe: a luminescence study

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.298-301

1996

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Heavily p-Type Doped ZnSe and ZnBeSe

Physica status solidi. B. Basic research, 2002-01, Vol.229 (1), p.385-389

2002

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Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?

Journal of applied physics, 1980-06, Vol.51 (6), p.3383-3387

Neumark, G. F.

1980

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Direct correlation of reversal rate dynamics to domain configurations in micron-sized permalloy elements

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy

Journal of applied physics, 2006-03, Vol.99 (6), p.064913-064913-5

2006

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Zinc Oxide Quantum Rods

Zn-Se-Te multilayers with submonolayer quantities of Te : Type-II quantum structures and isoelectronic centers

Quantum confinement in ZnO nanorods

Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

Time resolved photoluminescence studies of Zn-Se-Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy

Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te

Defects in wide band gap II-VI crystals

Role of native defects in wide-band-gap semiconductors

Heavily p-type doped ZnSe using Te and N codoping

Native defects and self-compensation in ZnSe

High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be–Zn co-irradiation

Modified donor–acceptor pair luminescence in heavily nitrogen-doped zinc selenide

Acceptor doping in ZnSe versus ZnTe

Wide bandgap light-emitting devices materials and doping problems

Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

Achievement of well conducting wide-band-gap semiconductors: role of solubility and nonequilibrium impurity incorporation

First-principles calculations of solubilities and doping limits : Li, Na, and N in ZnSe

Achievement of low-resistivity p-type ZnSe and the role of twinning

Compensation in heavily N-doped ZnSe: a luminescence study

Heavily p-Type Doped ZnSe and ZnBeSe

Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?

Direct correlation of reversal rate dynamics to domain configurations in micron-sized permalloy elements

Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy

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