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Effect of zinc concentration on physical properties of copper oxide (Cu1−xZnxO)

Journal of materials science. Materials in electronics, 2015-12, Vol.26 (12), p.9795-9800

2015

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Scattering from topological insulator circular cylinder buried in a semi-infinite medium

Journal of modern optics, 2014-05, Vol.61 (9), p.697-702

2014

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Arsenic antisite defects in p -GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect

Journal of applied physics, 2009-11, Vol.106 (10), p.103704-103704-7

2009

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Dual band nano structured anti reflection thin film coatings

Protection of metals and physical chemistry of surfaces, 2016-05, Vol.52 (3), p.481-485

2016

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Surface Analysis of Etched Silicon

Journal of surface engineered materials and advanced technology, 2014-04, Vol.4 (2), p.98-104

2014

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Structural Characteristics of Porous Silicon

Journal of surface engineered materials and advanced technology, 2014-04, Vol.4 (2), p.105-110

2014

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Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAs

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4977-4980

2009

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Ruthenium related deep-level defects in n-type GaAs

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4956-4958

2009

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Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4981-4983

2009

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Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAs

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4959-4962

2009

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Thermal annealing study of as-grown n-type MOCVD GaAs

Physica. B, Condensed matter, 2007-12, Vol.401, p.242-245

2007

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Doubly charged state of EL2 defect in MOCVD-grown GaAs

Physica. B, Condensed matter, 2007-12, Vol.401, p.250-253

2007

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Deep levels in α-irradiated p-type MOCVD GaAs

Physica. B, Condensed matter, 2007-12, Vol.401, p.503-506

2007

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Deep levels in GaAs/Al0.78Ga0.22As heterostructures

Physica. B, Condensed matter, 2007-12, Vol.401-402, p.266-269

2007

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Tune-Ability of Physical Properties of Nanocrystalline Cu^sub x^Zn^sub 1-x^Se Thin Films with Copper Concentration

Journal of electronic materials, 2015-12, Vol.44 (12), p.4754

2015

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Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

Journal of electronic materials, 2015-12, Vol.44 (12), p.4754-4759

2015

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Tune-Ability of Physical Properties of Nanocrystalline CuxZn1−xSe Thin Films with Copper Concentration

Journal of electronic materials, 2015-10, Vol.44 (12), p.4754-4759

2015

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Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

Journal of applied physics, 2011-06, Vol.109 (11), p.113705-113705-9

2011

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Effect of zinc concentration on physical properties of copper oxide (Cu sub(1-x)Zn sub(x)O)

Journal of materials science. Materials in electronics, 2015-12, Vol.26 (12), p.9795-9800

2015

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Deep Levels in InGaN/GaN-LEDs

Manufacturing Science and Technology, 2015-12, Vol.3 (5), p.274-277

2015

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Deep Level Transient Spectroscopy of AlGaInP LEDs

Journal of modern physics, 2014, Vol.5 (18), p.2075-2079

2014

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Electrical characterization of alpha radiation-induced defects in p-GaAs grown by metal-organic chemical-vapor deposition

Journal of applied physics, 2007-03, Vol.101 (6)

2007

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Electrical characterization of alpha radiation-induced defectsin p -GaAs grown by metal-organic chemical-vapor deposition

Journal of applied physics, 2007-03, Vol.101 (6), p.063701-063701-8

2007

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4 d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition

Journal of applied physics, 2008-12, Vol.104 (11), p.113708-113708-8

2008

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Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4981-4983

2009

Volltextzugriff (PDF)

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Effect of zinc concentration on physical properties of copper oxide (Cu1−xZnxO)

Scattering from topological insulator circular cylinder buried in a semi-infinite medium

Arsenic antisite defects in p -GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect

Dual band nano structured anti reflection thin film coatings

Surface Analysis of Etched Silicon

Structural Characteristics of Porous Silicon

Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAs

Ruthenium related deep-level defects in n-type GaAs

Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition

Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAs

Thermal annealing study of as-grown n-type MOCVD GaAs

Doubly charged state of EL2 defect in MOCVD-grown GaAs

Deep levels in α-irradiated p-type MOCVD GaAs

Deep levels in GaAs/Al0.78Ga0.22As heterostructures

Tune-Ability of Physical Properties of Nanocrystalline Cu^sub x^Zn^sub 1-x^Se Thin Films with Copper Concentration

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

Tune-Ability of Physical Properties of Nanocrystalline CuxZn1−xSe Thin Films with Copper Concentration

Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

Effect of zinc concentration on physical properties of copper oxide (Cu sub(1-x)Zn sub(x)O)

Deep Levels in InGaN/GaN-LEDs

Deep Level Transient Spectroscopy of AlGaInP LEDs

Electrical characterization of alpha radiation-induced defects in p-GaAs grown by metal-organic chemical-vapor deposition

Electrical characterization of alpha radiation-induced defectsin p -GaAs grown by metal-organic chemical-vapor deposition

4 d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition

Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition

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