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Deep-level defects in homoepitaxial p-type GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-03, Vol.36 (2)

Nakano, Yoshitaka

2018

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Optical bandgap widening of p-type Cu2O films by nitrogen doping

Applied physics letters, 2009-01, Vol.94 (2)

2009

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Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces

Applied surface science, 2020-04, Vol.509, p.144910, Article 144910

2020

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Deep-level optical spectroscopy investigation of N-doped TiO2 films

Applied physics letters, 2005-03, Vol.86 (13)

2005

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Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Journal of applied physics, 2012-11, Vol.112 (10)

2012

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Characteristics of N2 and O2 Plasma‐Induced Damages on AlGaN Thin Film Surfaces

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-07, Vol.33 (4)

2015

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Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface

Vacuum, 2015-09, Vol.119, p.264-269

2015

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Electrical characterization of band gap states in C-doped TiO2 films

Applied physics letters, 2005-08, Vol.87 (5)

2005

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Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

Philosophical magazine letters, 2015-06, Vol.95 (6), p.333-339

2015

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Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas

Thin solid films, 2014-11, Vol.570, p.81-86

2014

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Interface properties of thermally oxidized n -GaN metal–oxide–semiconductor capacitors

Applied physics letters, 2003-01, Vol.82 (2), p.218-220

2003

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Study of Defect Levels in the Band Gap for a Thick InGaN Film

Japanese Journal of Applied Physics, 2012-12, Vol.51 (12), p.121001-121001-5

2012

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Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

APL materials, 2017-01, Vol.5 (1), p.016105-016105-8

2017

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Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation

Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.470-473

2013

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Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

Applied physics letters, 2005-12, Vol.87 (23)

2005

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Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy

e-Journal of Surface Science and Nanotechnology, 2016/01/23, Vol.14, pp.9-13

2016

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Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy

E-journal of surface science and nanotechnology, 2016-01, Vol.14, p.9

2016

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Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers

Applied physics letters, 2003-11, Vol.83 (21), p.4336-4338

2003

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Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

Materials letters, 2019-11, Vol.254, p.96-98

2019

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Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1), p.01AD02-01AD02-4

2011

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Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Study of Defect Levels in the Band Gap for a Thick InGaN Film

Japanese Journal of Applied Physics, 2012-12, Vol.51 (12R), p.121001

2012

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Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

MRS proceedings, 2014, Vol.1635 (1), p.109-114

2014

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Deep-level defects in homoepitaxial p-type GaN

Optical bandgap widening of p-type Cu2O films by nitrogen doping

Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces

Deep-level optical spectroscopy investigation of N-doped TiO2 films

Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Characteristics of N2 and O2 Plasma‐Induced Damages on AlGaN Thin Film Surfaces

Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface

Electrical characterization of band gap states in C-doped TiO2 films

Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas

Interface properties of thermally oxidized n -GaN metal–oxide–semiconductor capacitors

Study of Defect Levels in the Band Gap for a Thick InGaN Film

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation

Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy

Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy

Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers

Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts

Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts

Study of Defect Levels in the Band Gap for a Thick InGaN Film

Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

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