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Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates

Applied physics letters, 1990-12, Vol.57 (23), p.2413-2415

1990

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Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing

Physical review letters, 1988-03, Vol.60 (13), p.1338-1341

1988

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Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1-xTex alloys grown by molecular beam epitaxy

Applied physics letters, 1991-06, Vol.58 (22), p.2509-2511

1991

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Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures

Applied physics letters, 1989-08, Vol.55 (8), p.792-794

1989

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Optical properties and band structure of short-period GaAs/AlAs superlattices

Journal of luminescence, 1987-12, Vol.39 (2), p.57-74

1987

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Designer interfaces in II-VI/III-V polar heteroepitaxy

Journal of applied physics, 1991-05, Vol.69 (10), p.7021-7028

1991

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OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates

Journal of crystal growth, 1992-11, Vol.124 (1), p.311-317

1992

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Optical transitions and chemistry at the In0.52Al0.48As/InP interface

Applied physics letters, 1992-04, Vol.60 (16), p.1981-1983

1992

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Molecular beam epitaxy of ZnSe1-xTex ternary alloys

Applied physics letters, 1991-04, Vol.58 (15), p.1611-1613

1991

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Roughness at the interface of thin InP/InAs quantum wells

Applied physics letters, 1993-11, Vol.63 (19), p.2688-2690

1993

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Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

Applied physics letters, 1989-01, Vol.54 (5), p.442-444

1989

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Raman scattering from electronic excitations in periodically δ-doped GaAs

Surface science, 1990-04, Vol.228 (1), p.251-254

1990

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MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers

Semiconductor science and technology, 1991-09, Vol.6 (9A), p.A8-A13

1991

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High speed, ion bombarded InGaAs photoconductors

Applied physics letters, 1985-02, Vol.46 (4), p.396-398

1985

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Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

Journal of crystal growth, 1991-05, Vol.111 (1), p.741-746

1991

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Luminescence investigations of highly strained-layer InAs-GaAs superlattices

Applied physics letters, 1986-05, Vol.48 (21), p.1476-1478

1986

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Double zinc diffusion fronts in InP: theory and experiment

Applied physics letters, 1983-09, Vol.43 (6), p.594-596

1983

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Zn1-yCdySe1-xTex quaternary wide band-gap alloys : molecular beam epitaxial growth and optical properties

Applied physics letters, 1991-09, Vol.59 (10), p.1206-1208

1991

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Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

Applied physics letters, 1992-03, Vol.60 (11), p.1345-1347

1992

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Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Journal of applied physics, 1989-11, Vol.66 (9), p.4295-4300

1989

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Real-time optical diagnostics for measuring and controlling epitaxial growth

Thin solid films, 1993-03, Vol.225 (1), p.26-31

1993

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Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Applied physics letters, 1991-08, Vol.59 (6), p.688-690

1991

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Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices

Journal of crystal growth, 1991-05, Vol.111 (1), p.762-766

1991

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Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy

Applied physics letters, 1990, Vol.56 (1), p.72-74

1990

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Optical investigations of the band structure of strained InAs/AlInAs quantum wells

Applied physics letters, 1988, Vol.52 (4), p.302-304

1988

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Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates

Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing

Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1-xTex alloys grown by molecular beam epitaxy

Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures

Optical properties and band structure of short-period GaAs/AlAs superlattices

Designer interfaces in II-VI/III-V polar heteroepitaxy

OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates

Optical transitions and chemistry at the In0.52Al0.48As/InP interface

Molecular beam epitaxy of ZnSe1-xTex ternary alloys

Roughness at the interface of thin InP/InAs quantum wells

Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

Raman scattering from electronic excitations in periodically δ-doped GaAs

MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers

High speed, ion bombarded InGaAs photoconductors

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

Luminescence investigations of highly strained-layer InAs-GaAs superlattices

Double zinc diffusion fronts in InP: theory and experiment

Zn1-yCdySe1-xTex quaternary wide band-gap alloys : molecular beam epitaxial growth and optical properties

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Real-time optical diagnostics for measuring and controlling epitaxial growth

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices

Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy

Optical investigations of the band structure of strained InAs/AlInAs quantum wells

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