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The germanium quantum information route

Nature reviews. Materials, 2021-10, Vol.6 (10), p.926-943

2021

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Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

Advanced materials interfaces, 2024-01, Vol.11 (2), p.n/a

2024

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Uprooting defects to enable high-performance III-V optoelectronic devices on silicon

Nature communications, 2019-09, Vol.10 (1), p.4322-12, Article 4322

2019

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Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Journal of applied physics, 2017-09, Vol.122 (10)

2017

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Strain mapping of silicon carbon suspended membranes

Materials & design, 2021-12, Vol.211, p.110135, Article 110135

2021

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Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon

Communications materials, 2023-12, Vol.4 (1), p.104-9, Article 104

2023

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Holes Outperform Electrons in Group IV Semiconductor Materials

Small science, 2023-04, Vol.3 (4), p.n/a

2023

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Electrical activation of nitrogen heavily implanted 3C-SiC(100)

Applied surface science, 2015-10, Vol.353, p.958-963

2015

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An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EH02-6

2014

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Characterization of SiGe thin films using a laboratory X-ray instrument

Journal of applied crystallography, 2013-08, Vol.46 (4), p.898-902

2013

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Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus

Semiconductor science and technology, 2018-11, Vol.33 (11), p.114007

2018

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Strained germanium for applications in spintronics

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2809-2819

2016

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Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Crystal growth & design, 2013-11, Vol.13 (11), p.4923-4929

2013

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Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Semiconductor science and technology, 2017-11, Vol.32 (11), p.114005

2017

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Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

Applied physics express, 2012-07, Vol.5 (7), p.71301

2012

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Strained germanium for applications in spintronics (Phys. Status Solidi A 11∕2016)

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.3056-3056

2016

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A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Semiconductor science and technology, 2022-06, Vol.37 (6), p.65003

2022

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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Science and technology of advanced materials, 2012-10, Vol.13 (5), p.055002-055002

2012

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Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries

Electrochimica acta, 2017-12, Vol.258, p.800-806

2017

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Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery

Electrochimica acta, 2020-01, Vol.330, p.135179, Article 135179

2020

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Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers

ACS photonics, 2016-11, Vol.3 (11), p.2004-2009

2016

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Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process

ECS transactions, 2013, Vol.50 (9), p.1081-1084

2013

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Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2R), p.721

2007

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Self-organised fractional quantisation in a hole quantum wire

Journal of physics. Condensed matter, 2018-03, Vol.30 (9), p.9-09LT01

2018

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Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

Semiconductor science and technology, 2018-01, Vol.33 (2)

2018

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The germanium quantum information route

Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

Uprooting defects to enable high-performance III-V optoelectronic devices on silicon

Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Strain mapping of silicon carbon suspended membranes

Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon

Holes Outperform Electrons in Group IV Semiconductor Materials

Electrical activation of nitrogen heavily implanted 3C-SiC(100)

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

Characterization of SiGe thin films using a laboratory X-ray instrument

Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus

Strained germanium for applications in spintronics

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

Strained germanium for applications in spintronics (Phys. Status Solidi A 11∕2016)

A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries

Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery

Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers

Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process

Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate

Self-organised fractional quantisation in a hole quantum wire

Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

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