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Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe

Journal of applied physics, 2022-10, Vol.132 (15)

2022

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Essentials of modern communications

2020

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Short-Memory Linear Processes and Econometric Applications

Mynbaev, Kairat T

1, 2011

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Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure

Semiconductors (Woodbury, N.Y.), 2021-07, Vol.55 (7), p.617-620

2021

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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

Semiconductors (Woodbury, N.Y.), 2023-05, Vol.57 (5), p.263-267

2023

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.43-49

2022

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Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12005

2020

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Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.354-358

2021

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (4), p.345-348

2024

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Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.519-523

2023

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Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1651-1655

2019

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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.557-561

2021

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Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.989-994

2021

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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Journal of electronic materials, 2020-08, Vol.49 (8), p.4642-4646

2020

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Numerical simulations of power characteristics and emission spectra of InAs(Sb)-based mid-infrared LED structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12176

2020

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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis

Russian physics journal, 2023-02, Vol.65 (10), p.1716-1731

2023

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Optical and structural studies of Hg0.7Cd0.3Te samples grown by various methods

Journal of physics. Conference series, 2021, Vol.2103 (1)

2021

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2024-02, Vol.58 (2), p.176-179

2024

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Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.428-433

2019

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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods

Russian physics journal, 2023, Vol.65 (9), p.1538-1554

2023

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Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12072

2018

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Essentials of Modern Communication

1st edition., 2020

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Journal of electronic materials, 2021-06, Vol.50 (6), p.3714-3721

2021

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Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12168

2020

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Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe

Essentials of modern communications

Short-Memory Linear Processes and Econometric Applications

Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds

Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Numerical simulations of power characteristics and emission spectra of InAs(Sb)-based mid-infrared LED structures

Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis

Optical and structural studies of Hg0.7Cd0.3Te samples grown by various methods

Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods

Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures

Essentials of Modern Communication

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures

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