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Thermodynamic assessment of phase diagram and concentration–temperature dependences of properties of solid solutions of the GaS–GaSe system

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1135-1141

2018

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Ab Initio Calculations of the Electronic Properties and the Transport Phenomena in Graphene Materials

Physics of the solid state, 2020-11, Vol.62 (11), p.2224-2231

2020

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Ab Initio Modeling of the Effect of the Position and Properties of Ordered Vacancies on the Magnetic State of a Graphene Monolayer

Physics of the solid state, 2021-05, Vol.63 (5), p.670-679

2021

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Dielectric and baric characteristics of TlS single crystal

Physica. B, Condensed matter, 2014-11, Vol.453, p.158-160

2014

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Simulation of Electronic Properties, Enthalpy of Formation, and Dielectric Characteristics of Yb-Doped Single Crystal TlInS2

Russian Journal of Physical Chemistry A, 2024, Vol.98 (1), p.1-8

2024

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Effect of Ionizing Radiation Parameters on the Properties of AgGaS2 Single Crystals

Inorganic materials, 2022-02, Vol.58 (2), p.111-116

2022

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Phase Equilibria in the Quasibinary Li2O⋅2B2O3–Yb2O3⋅B2O3 System, Assessment of Stability, and Conductivity of Solid Solutions Based on Li2O⋅2B2O3

Russian Journal of Physical Chemistry A, 2022-03, Vol.96 (3), p.508-514

2022

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Effect of Silver Doping on the Dielectric Properties of TlInSe2 Single Crystals

Inorganic materials, 2019-11, Vol.55 (11), p.1087-1091

2019

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Current Relaxation in TlGa1 – xDyxSe2 (x = 0.01, 0.03) Single Crystals

Physics of the solid state, 2020-07, Vol.62 (7), p.1150-1155

2020

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DFT Electronic Structure Simulation and Adsorption of Germanium in Ordered Graphene with a Vacancy

Russian microelectronics, 2022-04, Vol.51 (2), p.83-96

2022

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Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2

Russian microelectronics, 2023-02, Vol.52 (1), p.21-31

2023

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Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Physics of the solid state, 2018-03, Vol.60 (3), p.499-503

2018

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Modeling of the Electronic Properties of M-Doped Supercells Li4Ti5O12–M (М = Zr, Nb) with a Monoclinic Structure for Lithium-Ion Batteries

Russian microelectronics, 2024-02, Vol.53 (1), p.1-13

2024

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Simulation of the Physical-Chemical and Electronic Properties of Lithium-Containing 4H–SiC and Binary Phases of the Si–C–Li System

Russian microelectronics, 2024-02, Vol.53 (1), p.14-34

2024

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Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery

Russian microelectronics, 2023-06, Vol.52 (3), p.167-185

2023

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Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 –x (0 ≤ х ≤ 1)

Russian microelectronics, 2020-11, Vol.49 (6), p.452-465

2020

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Concentration Dependences of Charge Transfer and the Kinetics of Monte Carlo Modeling of the Growth of 2D Mono- and Nanocrystals of Gallium Chalcogenides

Russian microelectronics, 2021-11, Vol.50 (6), p.452-462

2021

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Modeling of Gold Adsorption by the Surface of Defect Graphene

Russian microelectronics, 2022-12, Vol.51 (6), p.413-425

2022

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Hopping Thermoelectric Power in TlCrS2

Inorganic materials, 2020-04, Vol.56 (4), p.333-337

2020

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Modifying the Dielectric Properties of the TlGaS2 Single Crystal by Electron Irradiation

Russian microelectronics, 2020-07, Vol.49 (4), p.263-268

2020

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Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields

Russian microelectronics, 2019-11, Vol.48 (6), p.422-427

2019

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Dielectric Parameters of (1 – x)TlGaSe2 ∙ xDy Single Crystals in AC Electric Fields

Metal science and heat treatment, 2020-05, Vol.62 (1-2), p.30-34

2020

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Low-temperature conductivity of gadolinium sulfides

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1137-1140

2016

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Thermodynamic and Dielectric Properties of As2S3–As2Se3

Russian journal of inorganic chemistry, 2020-05, Vol.65 (5), p.733-742

2020

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Dependence of the X-ray Sensitivity of AgGaS2 Single Crystals on Faces (001) and (100) on Dose and Hardness of Radiation

Russian microelectronics, 2022-06, Vol.51 (3), p.117-125

2022

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Thermodynamic assessment of phase diagram and concentration–temperature dependences of properties of solid solutions of the GaS–GaSe system

Ab Initio Calculations of the Electronic Properties and the Transport Phenomena in Graphene Materials

Ab Initio Modeling of the Effect of the Position and Properties of Ordered Vacancies on the Magnetic State of a Graphene Monolayer

Dielectric and baric characteristics of TlS single crystal

Simulation of Electronic Properties, Enthalpy of Formation, and Dielectric Characteristics of Yb-Doped Single Crystal TlInS2

Effect of Ionizing Radiation Parameters on the Properties of AgGaS2 Single Crystals

Phase Equilibria in the Quasibinary Li2O⋅2B2O3–Yb2O3⋅B2O3 System, Assessment of Stability, and Conductivity of Solid Solutions Based on Li2O⋅2B2O3

Effect of Silver Doping on the Dielectric Properties of TlInSe2 Single Crystals

Current Relaxation in TlGa1 – xDyxSe2 (x = 0.01, 0.03) Single Crystals

DFT Electronic Structure Simulation and Adsorption of Germanium in Ordered Graphene with a Vacancy

Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2

Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Modeling of the Electronic Properties of M-Doped Supercells Li4Ti5O12–M (М = Zr, Nb) with a Monoclinic Structure for Lithium-Ion Batteries

Simulation of the Physical-Chemical and Electronic Properties of Lithium-Containing 4H–SiC and Binary Phases of the Si–C–Li System

Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery

Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 –x (0 ≤ х ≤ 1)

Concentration Dependences of Charge Transfer and the Kinetics of Monte Carlo Modeling of the Growth of 2D Mono- and Nanocrystals of Gallium Chalcogenides

Modeling of Gold Adsorption by the Surface of Defect Graphene

Hopping Thermoelectric Power in TlCrS2

Modifying the Dielectric Properties of the TlGaS2 Single Crystal by Electron Irradiation

Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields

Dielectric Parameters of (1 – x)TlGaSe2 ∙ xDy Single Crystals in AC Electric Fields

Low-temperature conductivity of gadolinium sulfides

Thermodynamic and Dielectric Properties of As2S3–As2Se3

Dependence of the X-ray Sensitivity of AgGaS2 Single Crystals on Faces (001) and (100) on Dose and Hardness of Radiation

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