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Lasing in direct-bandgap GeSn alloy grown on Si

Nature photonics, 2015-02, Vol.9 (2), p.88-92

2015

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Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Chemistry of materials, 2015-07, Vol.27 (13), p.4693-4702

2015

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Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

Optics express, 2016-01, Vol.24 (2), p.1358-1367

2016

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Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulators

Physical review letters, 2014-08, Vol.113 (9), p.096601-096601

2014

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Opto-electronic characterization of three dimensional topological insulators

Journal of applied physics, 2016-10, Vol.120 (16)

2016

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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Tensely strained GeSn alloys as optical gain media

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers

Journal of physics. Condensed matter, 2016-10, Vol.28 (49), p.495501-495501

2016

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SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Thin solid films, 2014-04, Vol.557, p.183-187

2014

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Synaptic-like conductivity and plasticity in epitaxially strained SrTiO3 films

Journal of applied physics, 2019-06, Vol.125 (24)

2019

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Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)

Journal of applied physics, 2013-02, Vol.113 (5)

2013

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Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

Semiconductor science and technology, 2015-05, Vol.30 (5), p.55003

2015

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MBE growth optimization of topological insulator Bi2Te3 films

Journal of crystal growth, 2011-06, Vol.324 (1), p.115-118

2011

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Engineering of the Curie temperature of epitaxial Sr1−xBaxTiO3 films via strain

Journal of applied physics, 2016-09, Vol.120 (11)

2016

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Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Scientific reports, 2015-10, Vol.5 (1), p.15304-15304, Article 15304

2015

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Die imprinting of MGs: A one-step approach for large-area metallic photonic crystals

Materials & design, 2015-12, Vol.87, p.1018-1021

2015

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Magnetoresistance oscillations in MBE-grown Sb2Te3 thin films

Applied physics letters, 2017-02, Vol.110 (9)

2017

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Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Applied physics letters, 2011-05, Vol.98 (22), p.222503

2011

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

IEEE electron device letters, 2010-10, Vol.31 (10), p.1083-1085

2010

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SiGe quantum dot crystals with periods down to 35 nm

Nanotechnology, 2015-06, Vol.26 (25), p.255302-255302

2015

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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Solid-state electronics, 2013-05, Vol.83, p.2-9

2013

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Infrared/terahertz spectra of the photogalvanic effect in (Bi,Sb)Te based three-dimensional topological insulators

Physical review materials, 2018-02, Vol.2 (2), Article 024202

2018

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Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge∕SiGe quantum wells

Applied physics letters, 2006-12, Vol.89 (26)

2006

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Erratum: “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys” [Appl. Phys. Lett. 103 , 263103 (2013)]

Applied physics letters, 2015-04, Vol.106 (17)

2015

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Lasing in direct-bandgap GeSn alloy grown on Si

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulators

Opto-electronic characterization of three dimensional topological insulators

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Tensely strained GeSn alloys as optical gain media

Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Synaptic-like conductivity and plasticity in epitaxially strained SrTiO3 films

Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)

Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

MBE growth optimization of topological insulator Bi2Te3 films

Engineering of the Curie temperature of epitaxial Sr1−xBaxTiO3 films via strain

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Die imprinting of MGs: A one-step approach for large-area metallic photonic crystals

Magnetoresistance oscillations in MBE-grown Sb2Te3 thin films

Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

SiGe quantum dot crystals with periods down to 35 nm

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Infrared/terahertz spectra of the photogalvanic effect in (Bi,Sb)Te based three-dimensional topological insulators

Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge∕SiGe quantum wells

Erratum: “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys” [Appl. Phys. Lett. 103 , 263103 (2013)]

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