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Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

SILICON, 2022-11, Vol.14 (16), p.10437-10445

2022

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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Journal of electronic materials, 2024-06, Vol.53 (6), p.2973-2987

2024

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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Journal of electronic materials, 2024-09, Vol.53 (9), p.5555-5565

2024

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4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

Journal of electronic materials, 2024-05, Vol.53 (5), p.2601-2608

2024

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Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

Journal of electronic materials, 2022-09, Vol.51 (9), p.5219-5229

2022

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Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-11, Vol.273, p.115449, Article 115449

2021

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Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

SILICON, 2022-02, Vol.14 (4), p.1421-1429

2022

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Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

Journal of electronic materials, 2020, Vol.49 (1), p.524-529

2020

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UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

SILICON, 2022-11, Vol.14 (17), p.11079-11087

2022

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Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

International journal of electronics, 2021-08, Vol.108 (8), p.1273-1287

2021

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A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

Journal of electronic materials, 2022-03, Vol.51 (3), p.1215-1225

2022

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60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

SILICON, 2022-07, Vol.14 (11), p.5941-5949

2022

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Design and development of cross dipole antenna for satellite applications

Frequenz, 2020-07, Vol.74 (7), p.229-237

2020

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Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Journal of science. Advanced materials and devices, 2017-12, Vol.2 (4), p.515-522

2017

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Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of science. Advanced materials and devices, 2020-06, Vol.5 (2), p.192-198

2020

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Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

International journal of electronics letters, 2020-10, Vol.8 (4), p.472-482

2020

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DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

International journal of electronics and communications, 2017-07, Vol.77, p.163-168

2017

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Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review

Current nanoscience, 2025-01, Vol.21 (1), p.37-51

2025

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Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications

2024 International Conference on Advances in Modern Age Technologies for Health and Engineering Science (AMATHE), 2024, p.1-6

2024

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Optimizing Back Barrier Material Composition and Thickness of Al0.15Ga0.85N/GaN/AlxGa1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications

2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE), 2024, p.1-6

2024

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Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications

Micro and nanostructures (2022), 2024-05, Vol.189, p.207815, Article 207815

2024

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Breakdown voltage enhancement of gate field plate Al 0.295 Ga 0.705 N/GaN HEMTs

International journal of electronics, 2021-08, Vol.108 (8), p.1273-1287

2021

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Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Journal of science. Advanced materials and devices, 2017-12, Vol.2 (4), p.515-522

2017

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30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

Journal of semiconductors, 2017-08, Vol.38 (8), p.84001

2017

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DC and microwave characteristics of Lg 50nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

International journal of electronics and communications, 2017-07, Vol.77, p.163-168

2017

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Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

Design and development of cross dipole antenna for satellite applications

Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review

Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications

Optimizing Back Barrier Material Composition and Thickness of Al0.15Ga0.85N/GaN/AlxGa1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications

Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications

Breakdown voltage enhancement of gate field plate Al 0.295 Ga 0.705 N/GaN HEMTs

Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

DC and microwave characteristics of Lg 50nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

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