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Material matters in superconducting qubits

Materials science & engineering. R, Reports : a review journal, 2021-10, Vol.146, p.100646, Article 100646

Murray, Conal E.

2021

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Analytical Modeling of Participation Reduction in Superconducting Coplanar Resonator and Qubit Designs Through Substrate Trenching

IEEE transactions on microwave theory and techniques, 2020-08, Vol.68 (8), p.3263-3270

Murray, Conal E.

2020

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Auxetic crystals under stress: Peering into their mechanics using x-rays

Journal of applied physics, 2019-01, Vol.125 (4)

Murray, Conal E.

2019

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Effects of strain energy on the recrystallization within narrow metallization

Journal of applied physics, 2018-01, Vol.123 (4)

Murray, Conal E.

2018

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Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2018-03, Vol.36 (2)

2018

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Analytical Determination of Participation in Superconducting Coplanar Architectures

IEEE transactions on microwave theory and techniques, 2018-08, Vol.66 (8), p.3724-3733

2018

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High-mobility ultrathin semiconducting films prepared by spin coating

Nature, 2004-03, Vol.428 (6980), p.299-303

2004

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Origin of stress gradients induced in capped, copper metallization

Applied physics letters, 2014-02, Vol.104 (8)

Murray, Conal E.

2014

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Predicting substrate resonance mode frequency shifts using conductive, through-substrate vias

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Equivalence of Kröner and weighted Voigt-Reuss models for x-ray stress determination

Journal of applied physics, 2013-04, Vol.113 (15)

Murray, Conal E.

2013

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Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2474-2479

2007

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Strain imaging of nanoscale semiconductor heterostructures with x-ray Bragg projection ptychography

Physical review letters, 2014-04, Vol.112 (16), p.165502-165502, Article 165502

2014

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Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Journal of applied physics, 2017-10, Vol.122 (13)

2017

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Tailoring capping layers to reduce stress gradients in copper metallization

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Linking strain anisotropy and plasticity in copper metallization

Applied physics letters, 2015-05, Vol.106 (18)

2015

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Measurements of radioactive contaminants in semiconductor materials

Semiconductor science and technology, 2016-12, Vol.31 (12), p.123003

2016

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Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Solution-Processed Metal Chalcogenide Films for p-Type Transistors

Chemistry of materials, 2006-02, Vol.18 (3), p.587-590

2006

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The Role of Sample Geometry on Ultra-Low Alpha Particle Emissivity Measurements

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.550-558

2017

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High-Mobility p-Type Transistor Based on a Spin-Coated Metal Telluride Semiconductor

Advanced materials (Weinheim), 2006-09, Vol.18 (18), p.2448-2452

2006

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Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

IEEE electron device letters, 2016-02, Vol.37 (2), p.150-153

2016

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A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films

Journal of applied crystallography, 2009-06, Vol.42 (3), p.401-410

2009

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Modeling of kinematic diffraction from a thin silicon film illuminated by a coherent, focused X-ray nanobeam

Journal of applied crystallography, 2010-06, Vol.43 (3), p.587-595

2010

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The Role of Static Charge in Ultra-Low Alpha Particle Emissivity Measurements

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.3020-3026

2015

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Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Material matters in superconducting qubits

Analytical Modeling of Participation Reduction in Superconducting Coplanar Resonator and Qubit Designs Through Substrate Trenching

Auxetic crystals under stress: Peering into their mechanics using x-rays

Effects of strain energy on the recrystallization within narrow metallization

Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

Analytical Determination of Participation in Superconducting Coplanar Architectures

High-mobility ultrathin semiconducting films prepared by spin coating

Origin of stress gradients induced in capped, copper metallization

Predicting substrate resonance mode frequency shifts using conductive, through-substrate vias

Equivalence of Kröner and weighted Voigt-Reuss models for x-ray stress determination

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

Strain imaging of nanoscale semiconductor heterostructures with x-ray Bragg projection ptychography

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Tailoring capping layers to reduce stress gradients in copper metallization

Linking strain anisotropy and plasticity in copper metallization

Measurements of radioactive contaminants in semiconductor materials

Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens

Solution-Processed Metal Chalcogenide Films for p-Type Transistors

The Role of Sample Geometry on Ultra-Low Alpha Particle Emissivity Measurements

High-Mobility p-Type Transistor Based on a Spin-Coated Metal Telluride Semiconductor

Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films

Modeling of kinematic diffraction from a thin silicon film illuminated by a coherent, focused X-ray nanobeam

The Role of Static Charge in Ultra-Low Alpha Particle Emissivity Measurements

Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

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