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(Invited, Digital Presentation) Langmuir-Type Formulation for Atomic-Order Surface Reactions of Reactant Gases on Si (100) and Ge (100) Surfaces

ECS transactions, 2023-09, Vol.112 (1), p.3-11

Murota, Junichi

2023

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Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

Thin solid films, 2014-04, Vol.557, p.31-35

2014

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Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

Thin solid films, 2014-04, Vol.557, p.302-306

2014

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Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Thin solid films, 2014-04, Vol.557, p.10-13

2014

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Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth

ECS transactions, 2019-04, Vol.90 (1), p.43-53

Murota, Junichi

2019

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Behavior of N atoms after thermal nitridation of Si1−xGex surface

Thin solid films, 2012-02, Vol.520 (8), p.3392-3396

2012

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Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer

ECS journal of solid state science and technology, 2017, Vol.6 (8), p.P531-P534

2017

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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing

ECS transactions, 2013-08, Vol.58 (9), p.195-200

2013

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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Thin solid films, 2010, Vol.518 (6), p.S140-S142

2010

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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

Thin solid films, 2008-11, Vol.517 (1), p.10-13

2008

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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Applied surface science, 2008-07, Vol.254 (19), p.6086-6089

2008

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Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system

Solid-state electronics, 2009-08, Vol.53 (8), p.877-879

2009

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Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si 1–x Ge x Epitaxial Growth by Chemical Vapor Deposition

ECS journal of solid state science and technology, 2021-06, Vol.10 (6), p.64004

2021

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si 1−x Ge x Epitaxial Growth

ECS journal of solid state science and technology, 2021-02, Vol.10 (2), p.24005

2021

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(Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth

ECS transactions, 2016-04, Vol.72 (2), p.71-82

2016

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Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

Key engineering materials, 2011-02, Vol.470, p.98-103

2011

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Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors

ECS transactions, 2011, Vol.41 (7), p.337-343

2011

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Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

ECS transactions, 2013-08, Vol.58 (9), p.223-228

2013

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Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Thin solid films, 2010-01, Vol.518 (6), p.S62-S64

2010

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Fabrication of high-Ge-fraction strained Si1−Ge /Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

Solid-state electronics, 2011-06, Vol.60 (1), p.112-115

2011

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Strain relaxation by stripe patterning in Si/Si1-xGex/Si(100) heterostructures

Thin solid films, 2006-06, Vol.508 (1-2), p.239-242

2006

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X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

IEICE transactions on electronics, 2013, Vol.E96.C (5), p.680-685

2013

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Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Applied surface science, 2008-07, Vol.254 (19), p.6021-6024

2008

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Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Key engineering materials, 2011-01, Vol.470, p.201-206

2011

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Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

Applied surface science, 2004-03, Vol.224 (1), p.215-221

2004

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(Invited, Digital Presentation) Langmuir-Type Formulation for Atomic-Order Surface Reactions of Reactant Gases on Si (100) and Ge (100) Surfaces

Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth

Behavior of N atoms after thermal nitridation of Si1−xGex surface

Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer

(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing

Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system

Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si 1–x Ge x Epitaxial Growth by Chemical Vapor Deposition

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si 1−x Ge x Epitaxial Growth

(Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth

Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors

Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Fabrication of high-Ge-fraction strained Si1−Ge /Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

Strain relaxation by stripe patterning in Si/Si1-xGex/Si(100) heterostructures

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

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