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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2507-2510

2011

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Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier

Physics of the solid state, 2008-03, Vol.50 (3), p.538-542

2008

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Diagnostics of low-barrier Schottky diodes with near-surface δ-doping

Semiconductors (Woodbury, N.Y.), 2008-04, Vol.42 (4), p.490-492

2008

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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1485-1489

2017

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Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3), p.298-304

2008

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Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix

Surface investigation, x-ray, synchrotron and neutron techniques, 2008-08, Vol.2 (4), p.514-517

2008

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Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics

Surface investigation, x-ray, synchrotron and neutron techniques, 2012-07, Vol.6 (4), p.612-615

2012

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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Semiconductors (Woodbury, N.Y.), 2017, Vol.51 (8), p.1106-1106

2017

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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573

2016

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Planar detectors for multielement systems of millimeter-wave imaging

Radiophysics and quantum electronics, 2007-12, Vol.50 (12), p.973-982

2007

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A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

Russian microelectronics, 2010-09, Vol.39 (5), p.323-330

2010

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Properties of Mott contacts with an ultralow metal-semiconductor barrier

Physics of the solid state, 2008-10, Vol.50 (10), p.1964-1969

2008

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Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.449-453

2006

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Method of selective doping of silicon by segregating impurities

Technical physics letters, 2011-09, Vol.37 (9), p.824-826

2011

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Resistance of proton-irradiated GaAs photodetectors to combined gamma and neutron radiation

Semiconductors (Woodbury, N.Y.), 2004-07, Vol.38 (7), p.800-806

2004

Volltextzugriff (PDF)

Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.30

Murel’, A. V.

2005

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Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method

Semiconductors (Woodbury, N.Y.), 1999-10, Vol.33 (10), p.1133-1138

1999

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Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

Technical physics letters, 2000-04, Vol.26 (4), p.298-301

2000

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Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping

Semiconductors (Woodbury, N.Y.), 2004-05, Vol.38 (5), p.554-559

2004

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Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

Journal of applied physics, 2011-06, Vol.109 (11), p.113533-113533-7

2011

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Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

Semiconductors (Woodbury, N.Y.), 2002-05, Vol.36 (5), p.505-510

2002

Volltextzugriff (PDF)

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

Radiophysics and quantum electronics, 2005-06, Vol.48 (6), p.485-490

2005

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Heteroepitaxial III–V films on fianite substrates and buffer layers

Bulletin of the Russian Academy of Sciences. Physics, 2009-04, Vol.73 (4), p.485-490

2009

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On the radiation resistance of planar Gunn diodes with δ-doped layers

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1459-1467

2015

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Deep states in silicon δ-doped GaAs

Semiconductors (Woodbury, N.Y.), 1998-06, Vol.32 (6), p.659-664

1998

Volltextzugriff (PDF)

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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier

Diagnostics of low-barrier Schottky diodes with near-surface δ-doping

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer

Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix

Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics

Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Planar detectors for multielement systems of millimeter-wave imaging

A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

Properties of Mott contacts with an ultralow metal-semiconductor barrier

Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

Method of selective doping of silicon by segregating impurities

Resistance of proton-irradiated GaAs photodetectors to combined gamma and neutron radiation

Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells

Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method

Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping

Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

Heteroepitaxial III–V films on fianite substrates and buffer layers

On the radiation resistance of planar Gunn diodes with δ-doped layers

Deep states in silicon δ-doped GaAs

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