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Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni

Inorganic materials, 2017-11, Vol.53 (11), p.1131-1135

2017

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Relaxation channels of multi-photon excited xenon clusters

The Journal of chemical physics, 2015-09, Vol.143 (11), p.114302-114302

2015

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Quantum-chemical modeling of interaction between gold nanoclusters and thiols

Inorganic materials, 2010-09, Vol.46 (9), p.924-930

2010

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Electronic spectra of ArXe molecules in the region of Xe (5d, 7s, 7p, 6p'), 80 300–89 500 cm−1, using resonantly enhanced multiphoton ionization

Journal of physics. B, Atomic, molecular, and optical physics, 2010-12, Vol.43 (23), p.235101-235101

2010

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Electronic spectra of ArXe molecules in the region of Xe (6s', 6p, 5d), 77 000–80 200 cm−1, using resonantly enhanced multiphoton ionization

Journal of physics. B, Atomic, molecular, and optical physics, 2010-08, Vol.43 (15), p.155101-155101

2010

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Electronic Structure and Chemical Bonds in the Magnetic Semiconductors MnxCd1-xGeAs2 and MnxZn1-xGeAs2

Inorganic materials, 2008-11, Vol.44 (11), p.1169-1175

2008

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Electronic Structure and Ferromagnetic Transition Temperature of Ga1– xMnxAs in the Nonempirical Local Exchange Method

Inorganic materials, 2019, Vol.55 (1), p.1-8

2019

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Electronic Structure and Ferromagnetic Transition Temperature of Ga1 – x Mn x As in the Nonempirical Local Exchange Method

Inorganic materials, 2019-01, Vol.55 (1), p.1-8

2019

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Electronic structure and chemical bonds in the magnetic semiconductors MnxCd1 − x GeAs2 and MnxZn1 − x GeAs2

Inorganic materials, 2008-11, Vol.44 (11), p.1169-1175

2008

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The role of the plasmon mechanism in the secondary electron emission in LiF

Surface science, 1994-12, Vol.320 (3), p.361-368

1994

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Electronic structure and exchange interaction in Ga1–x Mn x As and In1–x Mn x Sb magnetic semiconductors

Inorganic materials, 2016-02, Vol.52 (2), p.89-93

2016

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Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2

Russian journal of inorganic chemistry, 2007-08, Vol.52 (8), p.1243-1247

2007

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Electronic structure and exchange interaction in Ga sub(1-x)

Inorganic materials, 2016-02, Vol.52 (2), p.89-93

2016

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Electronic structure and exchange interaction in Ga1–xMnxAs and In1–xMnxSb magnetic semiconductors

Inorganic materials, 2016, Vol.52 (2), p.89-93

2016

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Calculation of the exchange interaction in the Ga1–x Mn x As Magnetic semiconductor by the Hartree-Fock and DFT methods

Doklady. a journal of the Russian Academy of Sciences. Physics, 2015-11, Vol.60 (11), p.491-494

2015

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Properties of fullerene films obtained by high-kinetic-energy deposition on various surfaces

Technical physics, 2006-07, Vol.51 (7), p.959-961

2006

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Calculation of the exchange interaction in the Ga1–xMnxAs Magnetic semiconductor by the Hartree-Fock and DFT methods

Doklady. a journal of the Russian Academy of Sciences. Physics, 2015, Vol.60 (11), p.491-494

2015

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Band structure of the diluted magnetic semiconductor MnxCd1−x GeAs2

Inorganic materials, 2006-08, Vol.42 (8), p.835-838

2006

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Self-Organization and Dynamic Characteristics Study of Nanostructured Liquid Crystal Compounds

Solid state phenomena, 2005-01, Vol.106, p.145-148

2005

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Role of streptococcal IgG Fc receptor in tissue deposition of IgG in rabbits immunized with Streptococcus pyogenes

APMIS : acta pathologica, microbiologica et immunologica Scandinavica, 1992-01, Vol.100 (1-6), p.567-574

1992

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The binding energy of molecules in thin fullerene films

Technical physics letters, 2004-02, Vol.30 (2), p.129-130

2004

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Composition of Higher Fullerenes Obtained by Laser Ablation of Carboniferous Materials

Technical physics, 2005, Vol.50 (10), p.1301

Khodorkovskii, M. A.

2005

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Fullerene films highly resistant to laser radiation

Technical physics, 2004-02, Vol.49 (2), p.258-262

2004

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Electronic spectra of ArXe molecules in the region of Xe (5d, 7s, 7p, 6p '), 80 300-89 500 cm(-1), using resonantly enhanced multiphoton ionization

Journal of physics. B, Atomic, molecular, and optical physics, 2010-12, Vol.43 (23), p.235101

2010

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Electronic spectra of ArXe molecules in the region of Xe (6s ', 6p, 5d), 77 000-80 200 cm(-1), using resonantly enhanced multiphoton ionization

Journal of physics. B, Atomic, molecular, and optical physics, 2010-08, Vol.43 (15), p.155101

2010

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Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni

Relaxation channels of multi-photon excited xenon clusters

Quantum-chemical modeling of interaction between gold nanoclusters and thiols

Electronic spectra of ArXe molecules in the region of Xe (5d, 7s, 7p, 6p'), 80 300–89 500 cm−1, using resonantly enhanced multiphoton ionization

Electronic spectra of ArXe molecules in the region of Xe (6s', 6p, 5d), 77 000–80 200 cm−1, using resonantly enhanced multiphoton ionization

Electronic Structure and Chemical Bonds in the Magnetic Semiconductors MnxCd1-xGeAs2 and MnxZn1-xGeAs2

Electronic Structure and Ferromagnetic Transition Temperature of Ga1– xMnxAs in the Nonempirical Local Exchange Method

Electronic Structure and Ferromagnetic Transition Temperature of Ga1 – x Mn x As in the Nonempirical Local Exchange Method

Electronic structure and chemical bonds in the magnetic semiconductors MnxCd1 − x GeAs2 and MnxZn1 − x GeAs2

The role of the plasmon mechanism in the secondary electron emission in LiF

Electronic structure and exchange interaction in Ga1–x Mn x As and In1–x Mn x Sb magnetic semiconductors

Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2

Electronic structure and exchange interaction in Ga sub(1-x)

Electronic structure and exchange interaction in Ga1–xMnxAs and In1–xMnxSb magnetic semiconductors

Calculation of the exchange interaction in the Ga1–x Mn x As Magnetic semiconductor by the Hartree-Fock and DFT methods

Properties of fullerene films obtained by high-kinetic-energy deposition on various surfaces

Calculation of the exchange interaction in the Ga1–xMnxAs Magnetic semiconductor by the Hartree-Fock and DFT methods

Band structure of the diluted magnetic semiconductor MnxCd1−x GeAs2

Self-Organization and Dynamic Characteristics Study of Nanostructured Liquid Crystal Compounds

Role of streptococcal IgG Fc receptor in tissue deposition of IgG in rabbits immunized with Streptococcus pyogenes

The binding energy of molecules in thin fullerene films

Composition of Higher Fullerenes Obtained by Laser Ablation of Carboniferous Materials

Fullerene films highly resistant to laser radiation

Electronic spectra of ArXe molecules in the region of Xe (5d, 7s, 7p, 6p '), 80 300-89 500 cm(-1), using resonantly enhanced multiphoton ionization

Electronic spectra of ArXe molecules in the region of Xe (6s ', 6p, 5d), 77 000-80 200 cm(-1), using resonantly enhanced multiphoton ionization

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