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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Journal of applied physics, 2017-04, Vol.121 (16)

2017

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Study of TaN-Gated p-GaN E-Mode HEMT

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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IEEE_Xplore

V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111)

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4281-4287

2020

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IEEE_Xplore

Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2311-2317

2020

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IEEE_Xplore

Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

Journal of applied physics, 2021-08, Vol.130 (7)

2021

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20.2 GHz‐µm fT–LG in InAlN/GaN‐on‐Si High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2022-11, Vol.219 (21), p.n/a

2022

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Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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Optical properties of mist CVD grown α-Ga2O3

IEEE photonics technology letters, 2020-04, Vol.32 (7), p.1-1

2020

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IEEE_Xplore

Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

Physica status solidi. A, Applications and materials science, 2020-03, Vol.217 (5), p.n/a

2020

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Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.613-618

2019

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IEEE_Xplore

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2020-03, Vol.217 (5), p.n/a

2020

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UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1230-1235

2019

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IEEE_Xplore

Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3711-3718

2018

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IEEE_Xplore

Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader

IEEE transactions on components, packaging, and manufacturing technology (2011), 2020-02, Vol.10 (2), p.339-342

2020

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IEEE_Xplore

Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35021

2023

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Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

AIP advances, 2014-09, Vol.4 (9), p.097124-097124-10

2014

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Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD

Optical materials, 2023-11, Vol.145, p.114373, Article 114373

2023

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Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

IEEE photonics technology letters, 2019-08, Vol.31 (15), p.1237-1240

2019

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IEEE_Xplore

20.2 GHz‐µm f T –L G in InAlN/GaN‐on‐Si High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2022-11, Vol.219 (21)

2022

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Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6)

2018

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UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Sensors and actuators. A. Physical., 2021-01, Vol.317, p.112455, Article 112455

2021

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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Study of TaN-Gated p-GaN E-Mode HEMT

V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111)

Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

20.2 GHz‐µm fT–LG in InAlN/GaN‐on‐Si High Electron Mobility Transistors

Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

Optical properties of mist CVD grown α-Ga2O3

Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si

Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader

Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

20.2 GHz‐µm f T –L G in InAlN/GaN‐on‐Si High Electron Mobility Transistors

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

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