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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.236-242

2024

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Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

International journal of ceramic engineering & science, 2019-05, Vol.1 (1), p.6-20

2019

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Analysis for Extremely Low Off-State Current in CAAC-IGZO FETs

ECS transactions, 2015-05, Vol.67 (1), p.17-22

2015

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Numerical Analysis of Vacancy Transport by Residual Stress in Electromigration on LSI Interconnects

Japanese Journal of Applied Physics, 2010-02, Vol.49 (2), p.024301-024301-7

Nemoto, Takenao

2010

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50.2: High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.729-732

2011

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Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

Japanese Journal of Applied Physics, 2024-05, Vol.63 (5), p.51003

2024

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The application of the analysis of potential driven particle diffusion to the strength of materials

Strength, fracture and complexity, 2011, Vol.7 (2), p.215-233

2011

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27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.310-313

2022

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A Theoretical Analysis of Electromigration Failure in Aluminum Interconnections

Japanese Journal of Applied Physics, 2006-07, Vol.45 (7R), p.5716, Article 5716

2006

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TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

ECS transactions, 2020-09, Vol.98 (7), p.55-67

2020

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11.2: A New Process for Manufacture of Low Voltage, Polymer-Stabilized Blue Phase LCDs

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.125-128

2011

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1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

Proceedings of the International Display Workshops, 2022-12, p.172

2022

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Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage

ECS transactions, 2019-04, Vol.90 (1), p.139-146

2019

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An Energy-Efficient Normally Off Microcontroller With 880-nW Standby Power, 1 Clock System Backup, and 4.69- \mu s Wakeup Featuring 60-nm CAAC-IGZO FETs

IEEE solid-state circuits letters, 2019-12, Vol.2 (12), p.293-296

2019

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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.384-387

2022

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An Energy-Efficient Normally Off Microcontroller With 880-nW Standby Power, 1 Clock System Backup, and 4.69-[Formula Omitted]s Wakeup Featuring 60-nm CAAC-IGZO FETs

IEEE solid-state circuits letters, 2019-01, Vol.2 (12), p.293

2019

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28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.369-372

2011

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49.4: High-definition Top-emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.722-725

2011

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Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

Meeting abstracts (Electrochemical Society), 2020-11, Vol.MA2020-02 (28), p.1921-1921

2020

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In-situ observation of electromigration failure in AlCuSi interconnects with a passivation film

Strength, fracture and complexity, 2009, Vol.5 (2-3), p.97-107

2009

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A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs

2019 Symposium on VLSI Circuits, 2019, p.C48-C48

2019

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Theoretical Analysis of Vacancy Transport Combined with Electromigration and Stress Induced Voiding

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.634-635

2007

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302 The analysis of Electromigration and diffusive motion of Stress Induced Voiding for a thin film with an initial defect

The Proceedings of Conference of Tohoku Branch, 2005, Vol.2005.40, p.96-97

2005

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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

Analysis for Extremely Low Off-State Current in CAAC-IGZO FETs

Numerical Analysis of Vacancy Transport by Residual Stress in Electromigration on LSI Interconnects

50.2: High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors

Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

The application of the analysis of potential driven particle diffusion to the strength of materials

27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays

A Theoretical Analysis of Electromigration Failure in Aluminum Interconnections

TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

11.2: A New Process for Manufacture of Low Voltage, Polymer-Stabilized Blue Phase LCDs

1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage

An Energy-Efficient Normally Off Microcontroller With 880-nW Standby Power, 1 Clock System Backup, and 4.69- \mu s Wakeup Featuring 60-nm CAAC-IGZO FETs

32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

An Energy-Efficient Normally Off Microcontroller With 880-nW Standby Power, 1 Clock System Backup, and 4.69-[Formula Omitted]s Wakeup Featuring 60-nm CAAC-IGZO FETs

28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function

49.4: High-definition Top-emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

In-situ observation of electromigration failure in AlCuSi interconnects with a passivation film

A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs

Theoretical Analysis of Vacancy Transport Combined with Electromigration and Stress Induced Voiding

302 The analysis of Electromigration and diffusive motion of Stress Induced Voiding for a thin film with an initial defect

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