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Optical determination of strains in heterostructures: GaAs/Si as an example

Journal of applied physics, 1989-07, Vol.66 (1), p.196-200

1989

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Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

Electronics letters, 2007, Vol.43 (13), p.730-732

2007

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Experimental demonstration of oxide-mode influence in a dual-purpose oxide-confined vertical-cavity surface-emitting laser/resonant detector

Applied physics letters, 2002-09, Vol.81 (10), p.1771-1772

2002

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UV and ozone cleaning of GaSb (100) surfaces prior to MBE growth

Applied surface science, 1993-07, Vol.68 (3), p.357-359

1993

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GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxy

Applied physics letters, 1984-06, Vol.44 (12), p.1146-1148

1984

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Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence

Europhysics letters, 1993-09, Vol.23 (9), p.647-652

1993

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Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis

Journal of the Electrochemical Society, 1981-01, Vol.128 (1), p.149-153

1981

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Epitaxial growth of lattice-matched CaxSr1-xF2 on (100) and (110) GaAs substrates

Journal of applied physics, 1984-01, Vol.56 (6), p.1642-1646

1984

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Microtwinning and growth defects in GaAs MBE layers

Journal of crystal growth, 1982-10, Vol.59 (3), p.531-538

1982

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Low phonon energy, Nd : LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

IEEE journal of quantum electronics, 2001-11, Vol.37 (11), p.1469-1477

2001

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Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux

Journal of applied physics, 1988-07, Vol.64 (1), p.246-248

1988

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On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates

Journal of applied physics, 1988-08, Vol.64 (4), p.2076-2078

1988

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A GaAlAs-GaAs integrated coherence modulator

Journal of lightwave technology, 1999-01, Vol.17 (1), p.103-107

1999

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Ge Incorporation in GaAs Grown by Molecular Beam Epitaxy: A Thermodynamic Study

Journal of the Electrochemical Society, 1982-09, Vol.129 (9), p.2108-2113

1982

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Improved method for GaAs-(Ga,Al) As epitaxial regrowth

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-11, Vol.21 (2), p.157-160

1993

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Photoluminescence of molecular beam epitaxially grown Ge-doped GaAs

Journal of applied physics, 1983-05, Vol.54 (5), p.2630-2634

1983

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Highly unbalanced GaAlAs–GaAs integrated Mach–Zehnder interferometer for coherence modulation at 1.3 μm

Optics communications, 1999-08, Vol.167 (1), p.67-76

1999

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Optical Orientation in GaAs Grown on Si

Physica status solidi. A, Applied research, 1990-06, Vol.119 (2), p.K181-K183

1990

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Optical amplification of Raman scattering in a GaAs bulk microcavity

Journal of physics. Condensed matter, 1998-10, Vol.10 (42), p.9535-9540, Article 9535

1998

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Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition

Journal of applied physics, 1988-09, Vol.64 (5), p.2372-2374

1988

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Nanofabrication with a full control of the electrodes and quantum well dimensionalities: 3D-0D resonant tunnelling through quantum boxes

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.479-482

1996

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CaF2/Si and CaF2/GaAs interface formation: a photoemission study

Surface science, 1989-11, Vol.222 (1), p.119-128

1989

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Er3+ doping of CaF2 layers grown by molecular beam epitaxy

Applied physics letters, 1993-05, Vol.62 (21), p.2616-2618

1993

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Longitudinal optical and transverse optical modes of (Ca, Sr)F2 films grown on Si(111)

Thin solid films, 1993-01, Vol.223 (1), p.143-145

1993

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Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates

Journal of applied physics, 1992-07, Vol.72 (2), p.499-503

1992

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Optical determination of strains in heterostructures: GaAs/Si as an example

Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

Experimental demonstration of oxide-mode influence in a dual-purpose oxide-confined vertical-cavity surface-emitting laser/resonant detector

UV and ozone cleaning of GaSb (100) surfaces prior to MBE growth

GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxy

Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence

Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis

Epitaxial growth of lattice-matched CaxSr1-xF2 on (100) and (110) GaAs substrates

Microtwinning and growth defects in GaAs MBE layers

Low phonon energy, Nd : LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux

On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates

A GaAlAs-GaAs integrated coherence modulator

Ge Incorporation in GaAs Grown by Molecular Beam Epitaxy: A Thermodynamic Study

Improved method for GaAs-(Ga,Al) As epitaxial regrowth

Photoluminescence of molecular beam epitaxially grown Ge-doped GaAs

Highly unbalanced GaAlAs–GaAs integrated Mach–Zehnder interferometer for coherence modulation at 1.3 μm

Optical Orientation in GaAs Grown on Si

Optical amplification of Raman scattering in a GaAs bulk microcavity

Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition

Nanofabrication with a full control of the electrodes and quantum well dimensionalities: 3D-0D resonant tunnelling through quantum boxes

CaF2/Si and CaF2/GaAs interface formation: a photoemission study

Er3+ doping of CaF2 layers grown by molecular beam epitaxy

Longitudinal optical and transverse optical modes of (Ca, Sr)F2 films grown on Si(111)

Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates

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