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High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

IEEE electron device letters, 1997-11, Vol.18 (11), p.553-555

1997

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High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

IEEE electron device letters, 1997-11, Vol.18 (11), p.553-555

1997

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RF performance characteristics of InP millimeter-wave n/sup +/-n/sup -/-n/sup +/ Gunn devices

1997 IEEE MTT-S International Microwave Symposium Digest, 1997, Vol.2, p.451-454 vol.2

1997

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Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy

Journal of crystal growth, 1996-07, Vol.164 (1), p.454-459

1996

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Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE

Journal of crystal growth, 1996-07, Vol.164 (1), p.476-484

1996

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Experimental realization of the bound state resonant tunneling transistor

IEEE transactions on electron devices, 1993-11, Vol.40 (11), p.2133-2134

1993

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InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy

IEEE transactions on electron devices, 1994-02, Vol.41 (2), p.155-161

1994

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The potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results

1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.2, p.529-532 vol.2

1996

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The growth of resonant tunneling hot electron transistors using chemical beam epitaxy

Journal of crystal growth, 1994-03, Vol.136 (1), p.50-55

1994

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The growth of InAlP using trimethyl amine alane by chemical beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.226-229

1993

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Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Journal of crystal growth, 1994-03, Vol.136 (1), p.166-172

1994

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The optimization of In xGa 1−xAs and InP growth conditions by CBE

Journal of crystal growth, 1991, Vol.111 (1), p.594-598

1991

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Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.645-648

1997

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InGaAs MOMBE — system drift and material quality

Journal of crystal growth, 1991, Vol.107 (1), p.1074-1075

1991

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Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE

Journal of crystal growth, 1993-02, Vol.127 (1), p.25-28

1993

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The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm

Journal of crystal growth, 1992-05, Vol.120 (1), p.162-166

1992

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Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality

Journal of crystal growth, 1991-03, Vol.110 (3), p.452-456

1991

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InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE

Journal of crystal growth, 1992-05, Vol.120 (1), p.184-188

1992

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The optimization of InxGa1-xAs and InP growth conditions by CBE

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.594-598

1991

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The design of an ECR plasma system and its application to InP grown by CBE

Journal of crystal growth, 1991-05, Vol.111 (1), p.605-608

1991

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Experimental realization of the bound state resonant tunneling transistor

51st Annual Device Research Conference, 1993, p.126-127

1993

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F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT's using novel self-aligned offset-gate technology

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.360-363

1992

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Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, p.465-474

1995

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InAlAs/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy (CBE)

1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.385-388

1993

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InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993, p.62-68

1993

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High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

RF performance characteristics of InP millimeter-wave n/sup +/-n/sup -/-n/sup +/ Gunn devices

Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy

Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE

Experimental realization of the bound state resonant tunneling transistor

InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy

The potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results

The growth of resonant tunneling hot electron transistors using chemical beam epitaxy

The growth of InAlP using trimethyl amine alane by chemical beam epitaxy

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

The optimization of In xGa 1−xAs and InP growth conditions by CBE

Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

InGaAs MOMBE — system drift and material quality

Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE

The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm

Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality

InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE

The optimization of InxGa1-xAs and InP growth conditions by CBE

The design of an ECR plasma system and its application to InP grown by CBE

Experimental realization of the bound state resonant tunneling transistor

F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT's using novel self-aligned offset-gate technology

Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes

InAlAs/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy (CBE)

InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

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