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Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1615-1620

2009

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.313-316

2005

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Pr-Silicate Formation on SiO2 covered 3C-SiC(111)

Physics of Semiconductors; Part A, 2005, Vol.772, p.75-76

2005

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Interface reactivity of Pr and SiO2 at 4H-SiC(0001)

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1-3), p.19-22

2005

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Stability and electronic properties of silicates in the system SiO2–Pr2O3–Si(001)

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S153-S160

2004

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Journal of applied physics, 2008-05, Vol.103 (10), p.104103-104103-5

2008

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The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin solid films, 2009-10, Vol.517 (23), p.6334-6336

2009

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Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

Journal of applied physics, 2009-02, Vol.105 (3)

2009

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Dielectric and structural properties of thin SrHfO3 layers on TiN

Applied physics letters, 2008-12, Vol.93 (25)

2008

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The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces

MRS proceedings, 2004, Vol.811

2004

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Dielectric constant and leakage of BaZrO3 films

Applied physics letters, 2009-04, Vol.94 (15)

2009

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Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Journal of applied physics, 2009-11, Vol.106 (10)

2009

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Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Journal of applied physics, 2008-04, Vol.103 (8), p.084102-084102-11

2008

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On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.271-276

2009

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Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

New journal of physics, 2008-11, Vol.10 (11), p.113004

2008

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Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Physica status solidi. C, 2009-03, Vol.6 (3), p.653-662

2009

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Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

Microelectronic engineering, 2009-07, Vol.86 (7), p.1842-1844

2009

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Thermal stability of Pr silicate high- k layers on Si(001)

Applied physics letters, 2006-11, Vol.89 (22), p.222909-222909-3

2006

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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

Journal of the Electrochemical Society, 2008, Vol.155 (5), p.G97

2008

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Publisher's Note: 'Atomically smooth and single crystalline Ge(111)/cubic-Pr{sub 2}O{sub 3}(111)/Si(111) heterostructures: Structural and chemical composition study' [J. Appl. Phys. 105, 033512 (2009)]

Journal of applied physics, 2009-06, Vol.105 (12)

2009

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Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2165-2168

2007

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Atomically smooth and single crystalline Ge(111)/cubic-Pr{sub 2}O{sub 3}(111)/Si(111) heterostructures: Structural and chemical composition study

Journal of applied physics, 2009-02, Vol.105 (3)

2009

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Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

MIM capacitors using amorphous high-k PrTixOy dielectrics

Pr-Silicate Formation on SiO2 covered 3C-SiC(111)

Interface reactivity of Pr and SiO2 at 4H-SiC(0001)

Stability and electronic properties of silicates in the system SiO2–Pr2O3–Si(001)

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

Dielectric and structural properties of thin SrHfO3 layers on TiN

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces

Dielectric constant and leakage of BaZrO3 films

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

Thermal stability of Pr silicate high- k layers on Si(001)

Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

Publisher's Note: 'Atomically smooth and single crystalline Ge(111)/cubic-Pr{sub 2}O{sub 3}(111)/Si(111) heterostructures: Structural and chemical composition study' [J. Appl. Phys. 105, 033512 (2009)]

Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

Atomically smooth and single crystalline Ge(111)/cubic-Pr{sub 2}O{sub 3}(111)/Si(111) heterostructures: Structural and chemical composition study

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