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Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Applied physics express, 2024-07, Vol.17 (7), p.74001

2024

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Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.89-97

2022

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Design of kV-Class and Low RON E-Mode β-Ga2O3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa1−x)2O3/Ga2O3 Heterostructure

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5795-5802

2023

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Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.69-74

2022

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Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1681-1686

2024

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Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Journal of applied physics, 2022-06, Vol.131 (21)

2022

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The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal-Semiconductor Photodiode Based on Thermionic Emission Theory

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5644-5648

2022

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Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

Applied physics letters, 2023-05, Vol.122 (21)

2023

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High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Applied physics letters, 2024-06, Vol.124 (23)

2024

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High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant

Applied physics letters, 2022-05, Vol.120 (21)

2022

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High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Applied physics express, 2024-01, Vol.17 (1), p.14005

2024

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Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Applied physics letters, 2024-07, Vol.125 (4)

2024

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β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Electronics (Basel), 2024-04, Vol.13 (7), p.1234

2024

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Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Advanced electronic materials, 2024-02, Vol.10 (2), p.n/a

2024

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Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Materials today (Kidlington, England), 2021-10, Vol.49 (C), p.296-323

2021

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Epitaxial Growth of Ga2O3: A Review

Materials, 2024-08, Vol.17 (17), p.4261

2024

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Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

APL materials, 2023-06, Vol.11 (6), p.061127-061127-9

2023

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Design of kV-Class and Low R ON E-Mode β-Ga 2 O 3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa 1−x ) 2 O 3 /Ga 2 O 3 Heterostructure

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5795-5802

2023

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Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-03, Vol.41 (2)

2023

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Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-01, Vol.41 (2)

2023

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Design Space of Delta-Doped β-(Al x Ga 1- x ) 2 O 3 /Ga 2 O 3 High-Electron Mobility Transistors

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.69-74

2022

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Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Journal of applied physics, 2022-06, Vol.131 (21)

2022

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Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-GaO

Nanoscale, 2023-06, Vol.15 (23), p.9964-9972

2023

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Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Nanoscale, 2023-01, Vol.15 (23)

2023

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Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Applied physics express, 2024-07, Vol.17 (7)

2024

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Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Design of kV-Class and Low RON E-Mode β-Ga2O3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa1−x)2O3/Ga2O3 Heterostructure

Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors

Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal-Semiconductor Photodiode Based on Thermionic Emission Theory

Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Epitaxial Growth of Ga2O3: A Review

Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

Design of kV-Class and Low R ON E-Mode β-Ga 2 O 3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa 1−x ) 2 O 3 /Ga 2 O 3 Heterostructure

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Design Space of Delta-Doped β-(Al x Ga 1- x ) 2 O 3 /Ga 2 O 3 High-Electron Mobility Transistors

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-GaO

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

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