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Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors

Scientific reports, 2020-06, Vol.10 (1), p.8999-8999, Article 8999

2020

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator

IEEE electron device letters, 2018-03, Vol.39 (3), p.371-374

2018

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Effect of Hf Alloy in ZrOx Gate Insulator for Solution Processed a-IZTO Thin Film Transistors

IEEE electron device letters, 2019-01, Vol.40 (1), p.32-35

2019

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Solution-processed high-performance p-channel copper tin sulfide thin-film transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-08, Vol.9 (29), p.9188-9196

2021

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Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1021-1026

2020

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Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1035-1038

2017

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Advanced materials interfaces, 2019-07, Vol.6 (13), p.n/a

2019

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Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1021-1024

2020

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Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Nanomaterials (Basel, Switzerland), 2020-05, Vol.10 (5), p.976

2020

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P‐22: Flexible La Doped ZnO TFTs and Circuits on Polyimide Substrate for Foldable Display

SID International Symposium Digest of technical papers, 2021-05, Vol.52 (1), p.1135-1138

2021

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P‐122: Mechanical Bending Test of High Mobility ZnO TFTs on PI Substrate by Spray Pyrolysis

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.1829-1832

2020

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Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

ACS applied materials & interfaces, 2022-09, Vol.14 (36), p.41508-41519

2022

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High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O 3 Photocuring

ACS applied materials & interfaces, 2021-05, Vol.13 (17), p.20277-20287

2021

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Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

ACS applied materials & interfaces, 2020-08, Vol.12 (31), p.35164-35174

2020

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Nano-Scale Ga 2 O 3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

ACS applied materials & interfaces, 2022-09, Vol.14 (36), p.41508-41519

2022

Volltextzugriff (PDF)

High Performance of Solution-Processed Amorphous p‑Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring

ACS applied materials & interfaces, 2021-05, Vol.13 (17), p.20277-20287

2021

Volltextzugriff (PDF)

Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability

Applied surface science, 2021-12, Vol.568, p.150947, Article 150947

2021

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO x Gate Insulator

IEEE electron device letters, 2018-03, Vol.39 (3), p.371-374

2018

Volltextzugriff (PDF)

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O 2 Plasma Treatment

Advanced electronic materials, 2019-12, Vol.5 (12)

2019

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Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm 2 V –1 s –1 and Excellent Bias Stability

Advanced materials technologies, 2022-08, Vol.7 (8)

2022

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Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability

Advanced materials technologies, 2022-08, Vol.7 (8), p.n/a

2022

Volltextzugriff (PDF)

Effect of Hf Alloy in ZrO x Gate Insulator for Solution Processed a-IZTO Thin Film Transistors

IEEE electron device letters, 2019-01, Vol.40 (1), p.32

2019

Volltextzugriff (PDF)

Solution-Processed La Alloyed ZrO x High- k Dielectric for High-Performance ZnO Thin-Film Transistors

IEEE electron device letters, 2020-01, Vol.41 (7), p.1021

2020

Volltextzugriff (PDF)

Remarkable Stability Improvement of ZnO TFT with Al 2 O 3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Nanomaterials (Basel, Switzerland), 2020-05, Vol.10 (5)

2020

Volltextzugriff (PDF)

Enhancement of TFT performance by purification of indium-zinc-tin oxide

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2018, p.1-2

2018

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Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator

Effect of Hf Alloy in ZrOx Gate Insulator for Solution Processed a-IZTO Thin Film Transistors

Solution-processed high-performance p-channel copper tin sulfide thin-film transistors

Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

P‐22: Flexible La Doped ZnO TFTs and Circuits on Polyimide Substrate for Foldable Display

P‐122: Mechanical Bending Test of High Mobility ZnO TFTs on PI Substrate by Spray Pyrolysis

Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O 3 Photocuring

Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

Nano-Scale Ga 2 O 3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

High Performance of Solution-Processed Amorphous p‑Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring

Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO x Gate Insulator

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O 2 Plasma Treatment

Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm 2 V –1 s –1 and Excellent Bias Stability

Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability

Effect of Hf Alloy in ZrO x Gate Insulator for Solution Processed a-IZTO Thin Film Transistors

Solution-Processed La Alloyed ZrO x High- k Dielectric for High-Performance ZnO Thin-Film Transistors

Remarkable Stability Improvement of ZnO TFT with Al 2 O 3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Enhancement of TFT performance by purification of indium-zinc-tin oxide

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