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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Physica status solidi. PSS-RRL. Rapid research letters, 2016-04, Vol.10 (4), p.324-327

2016

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Homoepitaxial growth of CVD diamond after ICP pretreatment

Physica status solidi. A, Applications and materials science, 2015-11, Vol.212 (11), p.2572-2577

2015

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Investigation of the optimized parameters of microwave plasma-assisted chemical vapour deposition reactor operation in a pulsed mode

Journal of physics. D, Applied physics, 2012-10, Vol.45 (39), p.395202-1-11

2012

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Comparative study of homoepitaxial single crystal diamond growth at continuous and pulsed mode of MPACVD reactor operation

Diamond and related materials, 2011-08, Vol.20 (8), p.1225-1228

2011

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Experimental study of hydrogen plasma etching of (100) single crystal diamond in a MPACVD reactor

Materials letters, 2015-07, Vol.151, p.115-118

2015

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Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1622-1625

2016

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Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

Diamond and related materials, 2010-05, Vol.19 (5), p.432-436

2010

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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573

2016

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Microcrystalline diamond growth in presence of argon in millimeter-wave plasma-assisted CVD reactor

Diamond and related materials, 2008-07, Vol.17 (7), p.1055-1061

2008

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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Semiconductors (Woodbury, N.Y.), 2017, Vol.51 (8), p.1106-1106

2017

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Study of grown single crystal diamond by optical and X-ray spectroscopy

EPJ Web of Conferences, 2017, Vol.149, p.2029

2017

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Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.263-266

2012

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Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films

Radiophysics and quantum electronics, 2007-10, Vol.50 (10-11), p.913-921

2007

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Growth and characterization of combined single-crystalline and polycrystalline CVD diamond wafer

MRS proceedings, 2015, Vol.1734 (1), p.7-12, Article mrsf14-1734-r09-01

2015

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Single-crystal GaN/AlN layers on CVD diamond

Technical physics letters, 2015-10, Vol.41 (10), p.954-956

2015

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Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamond

Diamond and related materials, 2011, Vol.20 (8), p.1243-1245

2011

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Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.392-396

2011

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Hydrocarbon plasma chemistry in a continuous microwave discharge

Plasma physics reports, 2007-10, Vol.33 (10), p.871-879

2007

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Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm super(2/V s at 300 K for ion-implanted diamond)

Diamond and related materials, 2011-08, Vol.20 (8), p.1243-1245

2011

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Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

Diamond and related materials, 2010, Vol.19 (5-6), p.432-436

2010

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Microcrystalline diamond growth in presence of argon in millimeter-wave plasma-assisted CVD reactor

Diamond and related materials, 2008, Vol.17 (7-10), p.1055-1061

2008

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Development of a large volume line scanning, high spectral range and resolution 3D hyperspectral photoluminescence imaging microscope for diamond and other high refractive index materials

Optics express, 2024-04, Vol.32 (9), p.15231-15242

2024

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Nanometric diamond delta doping with boron

Physica status solidi. PSS-RRL. Rapid research letters, 2017-01, Vol.11 (1), p.np-n/a

2017

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Characterization of interfaces in mosaic CVD diamond crystal

Journal of crystal growth, 2016-05, Vol.442, p.62-67

2016

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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Homoepitaxial growth of CVD diamond after ICP pretreatment

Investigation of the optimized parameters of microwave plasma-assisted chemical vapour deposition reactor operation in a pulsed mode

Comparative study of homoepitaxial single crystal diamond growth at continuous and pulsed mode of MPACVD reactor operation

Experimental study of hydrogen plasma etching of (100) single crystal diamond in a MPACVD reactor

Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Microcrystalline diamond growth in presence of argon in millimeter-wave plasma-assisted CVD reactor

Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Study of grown single crystal diamond by optical and X-ray spectroscopy

Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films

Growth and characterization of combined single-crystalline and polycrystalline CVD diamond wafer

Single-crystal GaN/AlN layers on CVD diamond

Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamond

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

Hydrocarbon plasma chemistry in a continuous microwave discharge

Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm super(2/V s at 300 K for ion-implanted diamond)

Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

Microcrystalline diamond growth in presence of argon in millimeter-wave plasma-assisted CVD reactor

Development of a large volume line scanning, high spectral range and resolution 3D hyperspectral photoluminescence imaging microscope for diamond and other high refractive index materials

Nanometric diamond delta doping with boron

Characterization of interfaces in mosaic CVD diamond crystal

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