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Estimation of Heterogeneous Agent Models: A Likelihood Approach

Oxford bulletin of economics and statistics, 2023-04, Vol.85 (2), p.304-330

2023

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Electrical and Physical Characteristics of WO₃/Ag/WO₃ Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology

Sensors (Basel, Switzerland), 2018-08, Vol.18 (9), p.2803

2018

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Enhancing the Tunable Sensitivity of a Near-Ultraviolet to Visible to Near-Infrared Photo Irradiance Sensor Using an Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon

Crystals (Basel), 2023-11, Vol.13 (11), p.1530

2023

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Pioneering Fast and Safe Low-k Silicon Dioxide Synthesis for Modern Integrated Circuits

IEEE transactions on semiconductor manufacturing, 2024-05, Vol.37 (2), p.185-189

2024

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IEEE_Xplore

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Crystals (Basel), 2022-02, Vol.12 (2), p.295

2022

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Structure-function analysis of neutralizing antibodies to H7N9 influenza from naturally infected humans

Nature microbiology, 2019-02, Vol.4 (2), p.306

2019

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Economic theories and macroeconomic reality

Journal of monetary economics, 2022-03, Vol.126, p.105-117

2022

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Low-Frequency Vibration Sensor with Dual-Fiber Fabry–Perot Interferometer Using a Low-Coherence LED

Crystals (Basel), 2022-08, Vol.12 (8), p.1079

2022

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Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Micromachines (Basel), 2022-10, Vol.13 (11), p.1861

2022

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Visible-light Photocatalytic Study of SnOx:N Islands on Bi2MoO6

Sensors and materials, 2022-05, Vol.34 (5), p.1991

2022

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Intracranial mesenchymal tumor with multiple extracranial metastases: A case report and literature review

Radiology case reports, 2024-02, Vol.19 (2), p.825-830

2024

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Drifts and volatilities under measurement error: Assessing monetary policy shocks over the last century

Quantitative economics, 2016-07, Vol.7 (2), p.591-611

2016

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High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

Crystals (Basel), 2021-03, Vol.11 (3), p.262

2021

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Choosing Prior Hyperparameters: With Applications to Time-Varying Parameter Models

Journal of business & economic statistics, 2020-01, Vol.38 (1), p.124-136

2020

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On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Crystals (Basel), 2020-01, Vol.10 (1), p.34

2020

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Incorporating Asymmetric Preferences into Fan Charts and Path Forecasts

Oxford bulletin of economics and statistics, 2014-04, Vol.76 (2), p.287-297

2014

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Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1650-1655

2017

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Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

Applied physics letters, 2012-05, Vol.100 (20), p.203503-203503-4

2012

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Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Crystals (Basel), 2018-12, Vol.8 (12), p.454

2018

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Nanomaterials and Nanodevices

TheScientificWorld, 2015, Vol.2015, p.250401-2

2015

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Measurement errors and monetary policy: Then and now

Journal of economic dynamics & control, 2017-06, Vol.79, p.66-78

2017

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Apigenin targets fetuin-A to ameliorate obesity-induced insulin resistance

International journal of biological sciences, 2024-01, Vol.20 (5), p.1563-1577

2024

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Comparing the DSGE model with the factor model: an out-of-sample forecasting experiment

Journal of forecasting, 2009-03, Vol.28 (2), p.167-182

Wang, Mu-Chun

2009

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Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Journal of electronic materials, 2020-11, Vol.49 (11), p.6764-6775

2020

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Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

Applied physics letters, 2009-12, Vol.95 (25), p.253503-253503-3

2009

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Estimation of Heterogeneous Agent Models: A Likelihood Approach

Electrical and Physical Characteristics of WO₃/Ag/WO₃ Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology

Enhancing the Tunable Sensitivity of a Near-Ultraviolet to Visible to Near-Infrared Photo Irradiance Sensor Using an Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon

Pioneering Fast and Safe Low-k Silicon Dioxide Synthesis for Modern Integrated Circuits

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Structure-function analysis of neutralizing antibodies to H7N9 influenza from naturally infected humans

Economic theories and macroeconomic reality

Low-Frequency Vibration Sensor with Dual-Fiber Fabry–Perot Interferometer Using a Low-Coherence LED

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Visible-light Photocatalytic Study of SnOx:N Islands on Bi2MoO6

Intracranial mesenchymal tumor with multiple extracranial metastases: A case report and literature review

Drifts and volatilities under measurement error: Assessing monetary policy shocks over the last century

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

Choosing Prior Hyperparameters: With Applications to Time-Varying Parameter Models

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Incorporating Asymmetric Preferences into Fan Charts and Path Forecasts

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Nanomaterials and Nanodevices

Measurement errors and monetary policy: Then and now

Apigenin targets fetuin-A to ameliorate obesity-induced insulin resistance

Comparing the DSGE model with the factor model: an out-of-sample forecasting experiment

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

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