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Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique

Physica. E, Low-dimensional systems & nanostructures, 2008-04, Vol.40 (6), p.2031-2033

Mozume, T.

2008

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High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1707-1710

2009

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Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs-AlAs-AlAsSb Coupled Quantum Wells

IEEE photonics technology letters, 2007-04, Vol.19 (8), p.604-606

2007

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Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

IEEE photonics technology letters, 2008-12, Vol.20 (24), p.2183-2185

2008

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IEEE_Xplore

Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells

AIP conference proceedings, 2011, Vol.1399 (1)

2011

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Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Applied physics letters, 2012-02, Vol.100 (9)

2012

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Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

Journal of crystal growth, 2005-05, Vol.278 (1), p.183-187

2005

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Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy

Journal of applied physics, 2004-02, Vol.95 (3), p.1050-1055

2004

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1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

IEEE photonics technology letters, 2002-04, Vol.14 (4), p.495-497

2002

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IEEE_Xplore

Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.201-203

Mozume, T

2003

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Indices of refraction of AlGaAsSb by an optical waveguide technique

Journal of applied physics, 2007-12, Vol.102 (11), p.113111-113111-4

2007

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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2005-05, Vol.278 (1), p.178-182

2005

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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2007-04, Vol.301, p.177-180

2007

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Optical functions of AlAsSb characterized by spectroscopic ellipsometry

Physica status solidi. A, Applications and materials science, 2008-04, Vol.205 (4), p.872-875

2008

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Nonlinearity and recovery time of 1.55 mu m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

Electronics letters, 2001-01, Vol.37 (2), p.129-130

2001

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Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Journal of crystal growth, 2001-07, Vol.227, p.577-581

2001

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Ultrafast all-optical switching at 1.3 mu m/1.55 mu m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

Electronics letters, 1999-06, Vol.35 (13), p.1103-1105

1999

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Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures

AIP conference proceedings, 2009, Vol.1199 (1)

2009

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Interface control of InGaAs/AlAsSb heterostructures

Thin solid films, 2000-12, Vol.380 (1), p.249-251

2000

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Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure

IEEE photonics technology letters, 1999-06, Vol.11 (6), p.632-634

1999

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IEEE_Xplore

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

IEEE photonics technology letters, 2003-10, Vol.15 (10), p.1363-1365

2003

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IEEE_Xplore

Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures

IEEE journal of selected topics in quantum electronics, 2001-07, Vol.7 (4), p.710-717

2001

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IEEE_Xplore

Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3C28

2010

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Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.361-365

2002

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Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

Applied physics letters, 2002-06, Vol.80 (25), p.4696-4698

2002

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Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs-AlAs-AlAsSb Coupled Quantum Wells

Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells

Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy

1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Indices of refraction of AlGaAsSb by an optical waveguide technique

Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Optical functions of AlAsSb characterized by spectroscopic ellipsometry

Nonlinearity and recovery time of 1.55 mu m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Ultrafast all-optical switching at 1.3 mu m/1.55 mu m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures

Interface control of InGaAs/AlAsSb heterostructures

Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures

Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers

Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

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