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Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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A phase-correction approach for enhancing mid-infrared electro-optic sampling in highly nonlinear and dispersive birefringent crystals

Applied physics letters, 2024-09, Vol.125 (13)

2024

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Heterogeneous Integration of Compound Semiconductors

Annual review of materials research, 2010-06, Vol.40 (1), p.469-500

2010

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Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn

Crystal growth & design, 2020-05, Vol.20 (5), p.3493-3498

2020

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Enhanced Catalytic Activity for Methanol Electro-oxidation of Uniformly Dispersed Nickel Oxide Nanoparticles-Carbon Nanotube Hybrid Materials

Small (Weinheim an der Bergstrasse, Germany), 2012-11, Vol.8 (22), p.3390-3395

2012

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1D photonic crystal direct bandgap GeSn-on-insulator laser

Applied physics letters, 2021-11, Vol.119 (20)

2021

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Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Applied physics letters, 2022-04, Vol.120 (17)

2022

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Short-wave infrared cavity resonances in a single GeSn nanowire

Nature communications, 2023-07, Vol.14 (1), p.4393-4393, Article 4393

2023

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Coherent X-Ray Diffraction Imaging and Characterization of Strain in Silicon-on-Insulator Nanostructures

Advanced materials (Weinheim), 2014-12, Vol.26 (46), p.7747-7763

2014

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Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys

Journal of applied physics, 2020-01, Vol.127 (2)

2020

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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Nature communications, 2022-12, Vol.13 (1), p.7730-7730, Article 7730

2022

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Directed high-energy infrared laser beams for photovoltaic generation of electric power at remote locations

APL energy, 2024-06, Vol.2 (2), p.026101-026101-12

2024

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Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation

The journal of physical chemistry letters, 2016-05, Vol.7 (9), p.1667-1674

2016

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Laser-Assisted Field Evaporation and Three-Dimensional Atom-by-Atom Mapping of Diamond Isotopic Homojunctions

Nano letters, 2016-02, Vol.16 (2), p.1335-1344

2016

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Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Applied physics letters, 2022-05, Vol.120 (20)

2022

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Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Nanoscale, 2019-03, Vol.11 (11), p.4864-4875

2019

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Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Journal of applied physics, 2018-06, Vol.123 (22)

2018

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An Alternative Route Towards Metal-Polymer Hybrid Materials Prepared by Vapor-Phase Processing

Advanced functional materials, 2011-08, Vol.21 (16), p.3047-3055

2011

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Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Advanced materials interfaces, 2023-01, Vol.10 (3), p.n/a

2023

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Highly tensile-strained Ge/InAlAs nanocomposites

Nature communications, 2017-01, Vol.8 (1), p.14204-7, Article 14204

2017

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Heterointegration of Compound Semiconductors by Ultrathin Layer Splitting

ECS transactions, 2010, Vol.33 (13), p.177-187

Moutanabbir, Oussama

2010

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Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Applied physics letters, 2011-01, Vol.98 (1), p.013111-013111-3

2011

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Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Advanced science, 2022-04, Vol.9 (12), p.e2105722-n/a

2022

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Direct Optical Mapping of Anisotropic Stresses in Nanowires Using Transverse Optical Phonon Splitting

Nano letters, 2014-07, Vol.14 (7), p.3793-3798

2014

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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

Physical review materials, 2020-03, Vol.4 (3), Article 033604

2020

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Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys

A phase-correction approach for enhancing mid-infrared electro-optic sampling in highly nonlinear and dispersive birefringent crystals

Heterogeneous Integration of Compound Semiconductors

Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn

Enhanced Catalytic Activity for Methanol Electro-oxidation of Uniformly Dispersed Nickel Oxide Nanoparticles-Carbon Nanotube Hybrid Materials

1D photonic crystal direct bandgap GeSn-on-insulator laser

Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Short-wave infrared cavity resonances in a single GeSn nanowire

Coherent X-Ray Diffraction Imaging and Characterization of Strain in Silicon-on-Insulator Nanostructures

Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Directed high-energy infrared laser beams for photovoltaic generation of electric power at remote locations

Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation

Laser-Assisted Field Evaporation and Three-Dimensional Atom-by-Atom Mapping of Diamond Isotopic Homojunctions

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

An Alternative Route Towards Metal-Polymer Hybrid Materials Prepared by Vapor-Phase Processing

Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Highly tensile-strained Ge/InAlAs nanocomposites

Heterointegration of Compound Semiconductors by Ultrathin Layer Splitting

Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Direct Optical Mapping of Anisotropic Stresses in Nanowires Using Transverse Optical Phonon Splitting

Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

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