UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 93

Sortiert nach

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

Reports on progress in physics, 2017-10, Vol.80 (10), p.106501-106501

2017

Volltextzugriff (PDF)

Optoelectronic control of surface charge and translocation dynamics in solid-state nanopores

Nature nanotechnology, 2013-12, Vol.8 (12), p.946-951

2013

Volltextzugriff (PDF)

Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

Optics express, 2010-09, Vol.18 (20), p.21322-21329

2010

Volltextzugriff (PDF)

Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH)

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1165-1169

2016

Volltextzugriff (PDF)

The role of extended defects on the performance of optoelectronic devices in nitride semiconductors

Physica status solidi. A, Applications and materials science, 2013-01, Vol.210 (1), p.169-174

Moustakas, Theodore D.

2013

Volltextzugriff (PDF)

Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy

MRS communications, 2016-09, Vol.6 (3), p.247-269

Moustakas, Theodore D.

2016

Volltextzugriff (PDF)

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

Volltextzugriff (PDF)

Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

Journal of applied physics, 2009-06, Vol.105 (11), p.113103-113103-9

2009

Volltextzugriff (PDF)

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Applied physics letters, 2012-06, Vol.100 (24), p.241113

2012

Volltextzugriff (PDF)

Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

Applied physics letters, 2008-03, Vol.92 (10), p.101112-101112-3

2008

Volltextzugriff (PDF)

Plasmonic off-axis unidirectional beaming of quantum-well luminescence

Applied physics letters, 2013-12, Vol.103 (25)

2013

Volltextzugriff (PDF)

Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides

Optics express, 2007-12, Vol.15 (26), p.17922-17927

2007

Volltextzugriff (PDF)

How Indium Nitride Senses Water

Nano letters, 2017-12, Vol.17 (12), p.7339-7344

2017

Volltextzugriff (PDF)

The role of liquid phase epitaxy during growth of AlGaN by MBE

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.580-583

2012

Volltextzugriff (PDF)

Enhancement of Yellow Light Extraction Efficiency of Y 3Al 5O 12:Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer

IEEE photonics journal, 2016-01, Vol.8 (1), p.1-10

2016

Volltextzugriff (PDF)

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

IEEE photonics journal, 2017-08, Vol.9 (4), p.1-9

2017

Volltextzugriff (PDF)

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

MRS communications, 2016-09, Vol.6 (3), p.247-269

Moustakas, Theodore D.

2016

Volltextzugriff (PDF)

Sub-250 nm light emission and optical gain in AlGaN materials

Journal of applied physics, 2013-01, Vol.113 (1)

2013

Volltextzugriff (PDF)

Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure

Optical materials express, 2015-04, Vol.5 (4), p.809-817

2015

Volltextzugriff (PDF)

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells

Optics express, 2007-04, Vol.15 (9), p.5860-5865

2007

Volltextzugriff (PDF)

Scattering of electrons at threading dislocations in GaN

Journal of applied physics, 1998-04, Vol.83 (7), p.3656-3659

1998

Volltextzugriff (PDF)

Growth mode of nitride semiconductors on nano-patterned sapphire substrates by molecular beam epitaxy

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.195-199

2016

Volltextzugriff (PDF)

Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

Journal of applied physics, 2011-04, Vol.109 (8), p.083102-083102-5

2011

Volltextzugriff (PDF)

Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles

Applied physics letters, 2009-10, Vol.95 (15), p.151109-151109-3

2009

Volltextzugriff (PDF)

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Applied physics letters, 2011-09, Vol.99 (10), p.101905-101905-3

2011

Volltextzugriff (PDF)

1 – 25 von 93

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(58)
Mit Volltextzugriff
(75)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(91)
Japanisch
(17)

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Physical Sciences
(54)
Physics
(49)
Physics, Applied
(41)
Technology
(26)
Materials Science
(21)
Optics
(15)
Engineering
(13)
Engineering, Electrical & Electronic
(13)
Physics, Condensed Matter
(13)
Gallium Nitride
(10)
Molecular Beam Epitaxy
(10)
Materials Science, Multidisciplinary
(9)
Quantum Wells
(9)
Aluminum Gallium Nitride
(8)
Gallium Nitrides
(8)
Semiconductor Materials
(7)
Nanoscience & Nanotechnology
(6)
Science & Technology - Other Topics
(6)
Substrates
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

Optoelectronic control of surface charge and translocation dynamics in solid-state nanopores

Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH)

The role of extended defects on the performance of optoelectronic devices in nitride semiconductors

Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

Plasmonic off-axis unidirectional beaming of quantum-well luminescence

Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides

How Indium Nitride Senses Water

The role of liquid phase epitaxy during growth of AlGaN by MBE

Enhancement of Yellow Light Extraction Efficiency of Y 3Al 5O 12:Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Sub-250 nm light emission and optical gain in AlGaN materials

Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells

Scattering of electrons at threading dislocations in GaN

Growth mode of nitride semiconductors on nano-patterned sapphire substrates by molecular beam epitaxy

Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Suchergebnisse filtern