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Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire

Journal of crystal growth, 2007-03, Vol.300 (1), p.37-41

2007

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Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire

Journal of crystal growth, 2008-06, Vol.310 (12), p.2981-2986

2008

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Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-05, Vol.176 (9), p.723-726

2011

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Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy

Journal of crystal growth, 2006-03, Vol.288 (2), p.254-260

2006

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Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy

Solid state communications, 1996-02, Vol.97 (5), p.365-370

1996

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Photoemission study of sulfur and oxygen adsorption on GaN( 0 0 0 1 ¯ )

Surface science, 2006, Vol.600 (1), p.116-123

2006

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Complex ordering in ternary wurtzite nitride alloys

The Journal of physics and chemistry of solids, 2003-09, Vol.64 (9), p.1525-1532

2003

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Comparative study of GaN/AlGaN MQWs grown homoepitaxially on [formula omitted] and (0 0 0 1) GaN

Journal of crystal growth, 2003-04, Vol.251 (1), p.487-493

2003

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Potassium and ion beam induced electron accumulation in InN

Surface science, 2015-02, Vol.632, p.154-157

2015

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Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Journal of materials research, 1994-09, Vol.9 (9), p.2370-2378

1994

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Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

MRS advances, 2017-01, Vol.2 (5), p.271-276

2017

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Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE

MRS proceedings, 1995, Vol.395, Article 111

Moustakas, T.D.

1995

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Microstructure of vanadium-based contacts on n-type GaN

Journal of physics. D, Applied physics, 2012-03, Vol.45 (10), p.105401-1-6

2012

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Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

Journal of crystal growth, 2005-05, Vol.278 (1), p.387-392

2005

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Efficient p -type doping of GaN films by plasma-assisted molecular beam epitaxy

Applied physics letters, 2004-11, Vol.85 (21), p.4956-4958

2004

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Study of defects in wide band gap semiconductors by electron paramagnetic resonance

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.228-233

1993

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The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.29 (1), p.65-69

1995

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Planarization of GaN by the Etch-Back Method

MRS proceedings, 2005, Vol.892, Article 0892-FF14-11

2005

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Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy

Journal of applied physics, 2006-03, Vol.99 (6)

2006

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Growth of diamond thin films by ECR plasma-assisted CVD at low pressures and temperatures

Diamond and related materials, 1993-08, Vol.2 (10), p.1355-1359

1993

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Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy

Applied physics letters, 2006-06, Vol.88 (23)

2006

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Growth of GaN by ECR-assisted MBE

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.36-49

1993

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Growth and device applications of III-nitrides by MBE

Journal of crystal growth, 2001-07, Vol.227, p.13-20

2001

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Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering

Solid state communications, 1976-12, Vol.20 (10), p.969-972

1976

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Chapter 1 Introduction: A Historical Survey of Research on Gallium Nitride

Semiconductors and Semimetals, 1997, Vol.50, p.1-10

1997

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Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire

Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy

Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy

Photoemission study of sulfur and oxygen adsorption on GaN( 0 0 0 1 ¯ )

Complex ordering in ternary wurtzite nitride alloys

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on [formula omitted] and (0 0 0 1) GaN

Potassium and ion beam induced electron accumulation in InN

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE

Microstructure of vanadium-based contacts on n-type GaN

Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

Efficient p -type doping of GaN films by plasma-assisted molecular beam epitaxy

Study of defects in wide band gap semiconductors by electron paramagnetic resonance

The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV

Planarization of GaN by the Etch-Back Method

Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy

Growth of diamond thin films by ECR plasma-assisted CVD at low pressures and temperatures

Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy

Growth of GaN by ECR-assisted MBE

Growth and device applications of III-nitrides by MBE

Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering

Chapter 1 Introduction: A Historical Survey of Research on Gallium Nitride

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