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Chemically amplified resist CDSEM metrology exploration for high NA EUV lithography

Journal of Micro/Nanopatterning, Materials, and Metrology, 2022-04, Vol.21 (2)

2022

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Roughness evolution during the atomic layer deposition of metal oxides

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6)

2013

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Aggregation Numbers of Cationic Oligomeric Surfactants: A Time-Resolved Fluorescence Quenching Study

Langmuir, 2006-03, Vol.22 (6), p.2551-2557

2006

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Metrology for Monitoring and Detecting Process Issues in a TSV Module

ECS journal of solid state science and technology, 2014-01, Vol.3 (6), p.Q109-Q119

2014

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A Path to EUV Photoresist Reference Metrology Using Restricted Tilt Electron Tomography

Microscopy and microanalysis, 2020-08, Vol.26 (S2), p.1990-1991

2020

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Direct Measurement of the End-to-End Distance of Individual Polyfluorene Polymer Chains

Chemphyschem, 2005-11, Vol.6 (11), p.2286-2294

2005

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Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

ECS transactions, 2011, Vol.41 (7), p.239-248

2011

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Dielectric reliability of 70nm pitch air-gap interconnect structures

Microelectronic engineering, 2011-07, Vol.88 (7), p.1618-1622

2011

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E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography

Journal of Micro/Nanopatterning, Materials, and Metrology, 2023-10, Vol.22 (4)

2023

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Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Chemistry of materials, 2017-06, Vol.29 (11), p.4654-4666

2017

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In Situ Phosphorus Doping of Germanium by APCVD

ECS transactions, 2006-10, Vol.3 (7), p.599-609

2006

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Metal Etch Depth Metrology using YieldStar and CDSEM

2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2024, p.01-04

2024

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e-beam metrology of thin resist for high NA EUVL

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG0808

2023

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Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithography

Journal of Micro/Nanopatterning, Materials, and Metrology, 2023-04, Vol.22 (2)

2023

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Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Applied surface science, 2016-10, Vol.384, p.152-160

2016

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Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

Chemistry of materials, 2015-01, Vol.27 (1), p.245-254

2015

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Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

Physica status solidi. A, Applications and materials science, 2018-03, Vol.215 (6), p.n/a

2018

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Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

Journal of applied physics, 2015-12, Vol.118 (22)

2015

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Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization

Solid state phenomena, 2018-08, Vol.282, p.31-36

2018

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Si nanoripples: A growth dynamical study

Applied surface science, 2012-10, Vol.258 (24), p.9579-9583

2012

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Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

ACS applied materials & interfaces, 2013-10, Vol.5 (19), p.9605-9614

2013

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Microfabricated diamond tip for nanoprobing

Microelectronic engineering, 2009-04, Vol.86 (4), p.1222-1225

2009

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Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

Crystals (Basel), 2017-04, Vol.7 (4), p.98

2017

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Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH 4

ACS applied materials & interfaces, 2013-10, Vol.5 (19), p.9605-9614

2013

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Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2

Microelectronic engineering, 2011-07, Vol.88 (7), p.1517-1520

2011

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Chemically amplified resist CDSEM metrology exploration for high NA EUV lithography

Roughness evolution during the atomic layer deposition of metal oxides

Aggregation Numbers of Cationic Oligomeric Surfactants: A Time-Resolved Fluorescence Quenching Study

Metrology for Monitoring and Detecting Process Issues in a TSV Module

A Path to EUV Photoresist Reference Metrology Using Restricted Tilt Electron Tomography

Direct Measurement of the End-to-End Distance of Individual Polyfluorene Polymer Chains

Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

Dielectric reliability of 70nm pitch air-gap interconnect structures

E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography

Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

In Situ Phosphorus Doping of Germanium by APCVD

Metal Etch Depth Metrology using YieldStar and CDSEM

e-beam metrology of thin resist for high NA EUVL

Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithography

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization

Si nanoripples: A growth dynamical study

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

Microfabricated diamond tip for nanoprobing

Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH 4

Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2

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