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Resistivity dominated by surface scattering in sub-50 nm Cu wires

Applied physics letters, 2010-01, Vol.96 (4), p.042116-042116-3

2010

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Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets

Microelectronic engineering, 2012-04, Vol.92, p.9-14

2012

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Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Microelectronic engineering, 2012-04, Vol.92, p.9-14

2012

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Patterning with Amorphous Carbon Thin Films

ECS transactions, 2011, Vol.35 (4), p.701-716

2011

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Precursor selection for plasma deposited fluorinated amorphous carbon films

Thin solid films, 1998-11, Vol.332 (1-2), p.362-368

1998

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Fluorocarbon Films from Plasma Polymerization of Hexafluoropropylene and Hydrogen

MRS proceedings, 1996, Vol.443, Article 41

1996

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Ti-based Barrier for Cu Interconnect Applications

2008 International Interconnect Technology Conference, 2008, p.202-204

2008

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Electroless Cobalt Via Pre-Fill Process for Advanced BEOL Metallization and Via Resistance Variation Reduction

2018 IEEE International Interconnect Technology Conference (IITC), 2018, p.7-9

2018

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A comprehensive look at PVD scaling to meet the reliability requirements of advanced technology

2009 IEEE International Reliability Physics Symposium, 2009, p.855-860

2009

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Copper interconnects for semiconductor devices

JOM (1989), 2001-06, Vol.53 (6), p.43-48

2001

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In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.128-130

2006

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Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket W

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-05, Vol.11 (3), p.734-743

1993

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Method for angular sputter yield extraction for high-density plasma chemical vapor deposition simulators

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-05, Vol.16 (3), p.1123-1128

1998

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Adhesion of fluorinated amorphous carbon to various materials [metallisation]

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102), 1998, p.280-282

1998

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Cu electromigration improvement by adhesion promotion treatment (APT)

2011 IEEE International Interconnect Technology Conference, 2011, p.1-3

2011

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Process integration of iALD TaN for advanced Cu interconnects

2011 IEEE International Interconnect Technology Conference, 2011, p.1-3

2011

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Integration Studies of Plasma Deposited Fluorinated Amorphous Carbon

MRS proceedings, 1998, Vol.511, Article 259

1998

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Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices

Applied physics letters, 2015-02, Vol.106 (8)

2015

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New bending mode in SAQP Si fins and its mitigation

Materials science in semiconductor processing, 2022-04, Vol.141, p.106437, Article 106437

2022

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Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Electromigration Improvement for Advanced Technology Nodes

ECS transactions, 2009, Vol.18 (1), p.269-274

2009

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Development of electroless Co via-prefill to enable advanced BEOL metallization and via resistance reduction

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.111-113

2016

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Advanced integrated metallization enables 3D-IC TSV scaling

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, p.205-208

2015

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An alternative approach to backside via reveal (BVR) for a via-middle through-Silicon via (TSV) flow

2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 2015, p.551-554

2015

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Patterning with Amorphous Carbon Thin Films

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (22), p.1406-1406

2011

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Resistivity dominated by surface scattering in sub-50 nm Cu wires

Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets

Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Patterning with Amorphous Carbon Thin Films

Precursor selection for plasma deposited fluorinated amorphous carbon films

Fluorocarbon Films from Plasma Polymerization of Hexafluoropropylene and Hydrogen

Ti-based Barrier for Cu Interconnect Applications

Electroless Cobalt Via Pre-Fill Process for Advanced BEOL Metallization and Via Resistance Variation Reduction

A comprehensive look at PVD scaling to meet the reliability requirements of advanced technology

Copper interconnects for semiconductor devices

In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement

Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket W

Method for angular sputter yield extraction for high-density plasma chemical vapor deposition simulators

Adhesion of fluorinated amorphous carbon to various materials [metallisation]

Cu electromigration improvement by adhesion promotion treatment (APT)

Process integration of iALD TaN for advanced Cu interconnects

Integration Studies of Plasma Deposited Fluorinated Amorphous Carbon

Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices

New bending mode in SAQP Si fins and its mitigation

Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

Electromigration Improvement for Advanced Technology Nodes

Development of electroless Co via-prefill to enable advanced BEOL metallization and via resistance reduction

Advanced integrated metallization enables 3D-IC TSV scaling

An alternative approach to backside via reveal (BVR) for a via-middle through-Silicon via (TSV) flow

Patterning with Amorphous Carbon Thin Films

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