UB Paderborn / Katalog / Suche / in CDI

Igaku butsuri : Nihon Igaku Butsuri Gakkai kikanshi = Japanese journal of medical physics : an official journal of Japan Society of Medical Physics, 2023, Vol.43 (1), p.1

2023

Link zum Volltext

Verfügbarkeit prüfen

1 – 24 von 24

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(19)
Mit Volltextzugriff
(19)

Publikationsform

Artikel
(20)
Tagungsberichte
(4)

Sprache

Englisch
(23)
Japanisch
(11)

Erscheinungsjahr

n.n

Thema

Crystallization
(15)
Science & Technology
(14)
Germanium
(10)
Physical Sciences
(9)
Physics
(9)
Physics, Applied
(9)
Annealing
(7)
Substrates
(7)
Technology
(6)
Grain Size
(5)
Semiconductor Devices
(5)
Thin Film Transistors
(5)
Irradiation
(4)
Materials Science
(4)
Materials Science, Multidisciplinary
(4)
Thin Films
(4)
Tin
(4)
Transistors
(4)
Diffusion
(3)
Engineering
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Improving carrier mobility of polycrystalline Ge by Sn doping

Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Solid‐Phase Crystallization of GeSn Thin Films on GeO2‐Coated Glass

Solid‐Phase Crystallization of GeSn Thin Films on GeO2‐Coated Glass

Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge

Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration ( ∼ 10%) GeSn on insulator enhanced by weak laser irradiation

Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization

Solid‐Phase Crystallization of GeSn Thin Films on GeO 2 ‐Coated Glass

Solid‐Phase Crystallization of GeSn Thin Films on GeO 2 ‐Coated Glass

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation

Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO 2

Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO sub(2)

Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤20 nm) by Post-Annealing for Thin-Film Transistor Application

Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applications

Thickness-dependent substitutional-Sn-concentration in GeSn-on-insuiator by weak-laser-irradiation-enhanced solid-phase crystallization at low-temperature (180°C)

Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Forward-projected Model-based Iterative Reconstruction SoluTion in Temporal Bone Computed Tomography: A Comparison Study of All Reconstruction Modes

Technical Report: Quality Assurance for 125 I Seed Sources in Permanent Prostate Brachytherapy

Suchergebnisse filtern