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Low-frequency noise in GaN nanowire transistors

Journal of applied physics, 2008-03, Vol.103 (6), p.064501-064501-4

2008

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Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Energy Applications

Journal of physics. Conference series, 2013, Vol.471 (1), p.12017

2013

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Nitro-Aromatic Explosive Sensing Using GaN Nanowire-Titania Nanocluster Hybrids

IEEE sensors journal, 2013-05, Vol.13 (5), p.1883-1888

2013

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Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

Journal of applied physics, 2003-01, Vol.93 (2), p.1087-1094

2003

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Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN

Physica status solidi. C, 2005-05, Vol.2 (7), p.2551-2554

2005

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UV-Assisted Alcohol Sensing With Zinc Oxide-Functionalized Gallium Nitride Nanowires

IEEE electron device letters, 2012-07, Vol.33 (7), p.1075-1077

2012

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Chemicophysical surface treatment and the experimental demonstration of Schottky-Mott rules for metal∕semiconductor heterostructure interfaces

The Journal of chemical physics, 2005-11, Vol.123 (19), p.194703-194703-8

2005

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Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires

Nanotechnology, 2011-11, Vol.22 (46), p.465703-1-7

2011

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Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN

Journal of applied physics, 2001-06, Vol.89 (11), p.6214-6217

2001

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TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

MRS proceedings, 2003, Vol.764, Article C3.17

2003

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Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors

Nanotechnology, 2012-05, Vol.23 (17), p.175501-175501

2012

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Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers

Solid-state electronics, 2001-02, Vol.45 (2), p.325-333

2001

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Three Dimensionally Structured CdTe Thin-Film Photovoltaic Devices with Self-Aligned Back-Contacts: Electrodeposition on Interdigitated Electrodes

Journal of the Electrochemical Society, 2009, Vol.156 (8), p.H654

2009

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Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment

Journal of applied physics, 2004-09, Vol.96 (6), p.3286-3295

2004

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Analytical Electron Microscopy of Semiconductor Nano wire Functional Materials and Devices for Energy Applications

Journal of physics. Conference series, 2013-01, Vol.471, p.1-4

2013

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Crystal Structure and Orientation of Nanowires Determined by EBSD

Microscopy and microanalysis, 2007-08, Vol.13 (S02), p.936-937

2007

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High-transparency Ni/Au bilayer contacts to n-type GaN

Journal of applied physics, 2002-11, Vol.92 (9), p.5218-5227

2002

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Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Journal of applied physics, 2004-02, Vol.95 (3), p.1516-1524

2004

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(Invited) Three-Dimensionally Structured Thin Film Heterojunction Photovoltaics on Interdigitated Back-Contacts

ECS transactions, 2010, Vol.28 (2), p.521-532

2010

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Electron Beam-induced Light Emission and Transport in GaN Nanowires

2006 1st International Conference on Nano-Networks and Workshops, 2006, p.1-4

2006

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Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation

2007 65th Annual Device Research Conference, 2007, p.167-168

2007

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Tuned performance of small-signal BJT Darlington pair

Solid-state electronics, 2001-02, Vol.45 (2), p.369-371

2001

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Electrical, microstructural, and thermal stability characteristicsof Ta/Ti/Ni/Au contacts to n-GaN

Journal of applied physics, 2003-06, Vol.95 (3)

2003

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Latchup resistant Ge1−xSix/Si heterostructure CMOS design for VLSI application

Solid-state electronics, 2001-02, Vol.45 (2), p.287-291

2001

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Experimental investigation of factors influencing design of small-signal CMOS amplifiers

Solid-state electronics, 2001, Vol.45 (1), p.63-69

2001

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Low-frequency noise in GaN nanowire transistors

Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Energy Applications

Nitro-Aromatic Explosive Sensing Using GaN Nanowire-Titania Nanocluster Hybrids

Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN

UV-Assisted Alcohol Sensing With Zinc Oxide-Functionalized Gallium Nitride Nanowires

Chemicophysical surface treatment and the experimental demonstration of Schottky-Mott rules for metal∕semiconductor heterostructure interfaces

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires

Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors

Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers

Three Dimensionally Structured CdTe Thin-Film Photovoltaic Devices with Self-Aligned Back-Contacts: Electrodeposition on Interdigitated Electrodes

Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment

Analytical Electron Microscopy of Semiconductor Nano wire Functional Materials and Devices for Energy Applications

Crystal Structure and Orientation of Nanowires Determined by EBSD

High-transparency Ni/Au bilayer contacts to n-type GaN

Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

(Invited) Three-Dimensionally Structured Thin Film Heterojunction Photovoltaics on Interdigitated Back-Contacts

Electron Beam-induced Light Emission and Transport in GaN Nanowires

Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation

Tuned performance of small-signal BJT Darlington pair

Electrical, microstructural, and thermal stability characteristicsof Ta/Ti/Ni/Au contacts to n-GaN

Latchup resistant Ge1−xSix/Si heterostructure CMOS design for VLSI application

Experimental investigation of factors influencing design of small-signal CMOS amplifiers

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