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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A111-A116

2005

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Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.939-943

2003

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X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Materials science forum, 2004-01, Vol.457-460, p.363-366

2004

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Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Technical physics letters, 2002-11, Vol.28 (11), p.935-938

2002

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Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Materials science forum, 2003-09, Vol.433-436, p.293-296

2003

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Effect of preparation conditions on diamond cluster formation in bulk nanoporous carbon

Diamond and related materials, 2003-03, Vol.12 (3), p.378-382

2003

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Role of the defects under porous silicon carbide formation

Applied surface science, 2001-12, Vol.184 (1), p.252-256

2001

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GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers

Technical physics letters, 2005, Vol.31 (11), p.915

Bessolov, V. N.

2005

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Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements

Physics of the solid state, 1999-01, Vol.41 (1), p.25-31

1999

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Structure, Impurity Composition, and Photoluminescence of Mechanically Polished Layers of Single-Crystal Silicon

Physics of the solid state, 2005-01, Vol.47 (1), p.1

Batalov, R. I.

2005

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Heteropolytype structures with SiC quantum dots

Technical physics letters, 2005-01, Vol.31 (12), p.997-1000

2005

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Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

Technical physics letters, 2001-12, Vol.27 (12), p.1052-1054

2001

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Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Journal of crystal growth, 1999-05, Vol.201, p.481-485

1999

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Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

Technical physics letters, 2004-01, Vol.30 (11), p.950-953

2004

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Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide

Technical physics letters, 2001-06, Vol.27 (6), p.467-469

2001

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The formation of β-FeSi2 precipitates in microcrystalline Si

Semiconductors (Woodbury, N.Y.), 2002-11, Vol.36 (11), p.1235-1239

2002

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The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

Physics of the solid state, 2006-08, Vol.48 (8), p.1577-1583

2006

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Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

Physics of the solid state, 2000-01, Vol.42 (9), p.1606-1609

2000

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Structural state of III nitride layers implanted with erbium ions

Physics of the solid state, 2006-09, Vol.48 (9), p.1672-1677

2006

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Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

Semiconductors (Woodbury, N.Y.), 1998-05, Vol.32 (5), p.555-561

1998

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TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth

Materials science forum, 2001-10, Vol.389-393 (1), p.271-274

2001

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Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films

Semiconductors (Woodbury, N.Y.), 2001-06, Vol.35 (6), p.684

Mezdrogina, M. M.

2001

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Specific features of crystallization of In-doped germanium under microgravity

Microgravity science and technology, 1991-10, Vol.4 (3), p.172-178

1991

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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Journal of physics. D, Applied physics (Print), 2005, Vol.38 (10A), p.A111-A116

2005

Volltextzugriff (PDF)

Iron disilicide formed in a-Si thin films by magnetron co-sputtering

Physica. B, Condensed matter, 2003, Vol.340-42, p.939-943

2003

Volltextzugriff (PDF)

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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Effect of preparation conditions on diamond cluster formation in bulk nanoporous carbon

Role of the defects under porous silicon carbide formation

GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers

Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements

Structure, Impurity Composition, and Photoluminescence of Mechanically Polished Layers of Single-Crystal Silicon

Heteropolytype structures with SiC quantum dots

Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide

The formation of β-FeSi2 precipitates in microcrystalline Si

The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

Structural state of III nitride layers implanted with erbium ions

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth

Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films

Specific features of crystallization of In-doped germanium under microgravity

X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Iron disilicide formed in a-Si thin films by magnetron co-sputtering

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