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Handbook of Nitride Semiconductors and Devices

Morko , Hadis

Volume 2, 2009

Volltextzugriff (PDF)

Nitride Semiconductor Devices: Fundamentals and Applications

Morkoc, Hadis

1. Aufl., 2013

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Zinc Oxide: Fundamentals, Materials and Device Technology

1. Aufl., 2008

Volltextzugriff (PDF)

Luminescence properties of defects in GaN

Journal of applied physics, 2005-03, Vol.97 (6), p.061301-061301-95

2005

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On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Applied physics letters, 2008-09, Vol.93 (12), p.121107-121107-3

2008

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Handbook of nitride semiconductors and devices, vol. 3: gan-based optical and electronic devices.

Morkoç, Hadis

2009

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Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Applied physics letters, 2008-10, Vol.93 (17), p.171113-171113-3

2008

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Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices

Morkoç, Hadis

1. Aufl., 2009

Volltextzugriff (PDF)

Luminescence of Acceptors in Mg-Doped GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JJ03-08JJ03-2

2013

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Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Journal of applied physics, 2010-01, Vol.107 (1), p.014508-014508-5

2010

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GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JH03-08JH03-4

2013

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Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates

Applied physics letters, 2008-08, Vol.93 (5)

2008

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Regrowth of ZnO thin film with high surface flatness and enhanced optical properties on annealed buffer layers by rf sputtering deposition

Superlattices and microstructures, 2010-11, Vol.48 (5), p.502-508

2010

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Large electro-optic effect in single-crystal Pb(Zr,Ti)O3 (001) measured by spectroscopic ellipsometry

Journal of applied physics, 2008-11, Vol.104 (9)

2008

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Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films

Applied physics letters, 2009-07, Vol.95 (1)

2009

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GaN resistive hydrogen gas sensors

Applied physics letters, 2005-08, Vol.87 (7), p.073507-073507-3

2005

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Dielectric functions and electronic band structure of lead zirconate titanate thin films

Journal of applied physics, 2005-11, Vol.98 (9), p.094108-094108-10

2005

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Reactive ion etch damage on GaN and its recovery

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1197-1201

2006

Volltextzugriff (PDF)

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/ AlGaN ∕ GaN field effect transistor

Applied physics letters, 2006-03, Vol.88 (12), p.123508-123508-3

2006

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Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

Applied physics letters, 2006-10, Vol.89 (15)

2006

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Visible-ultraviolet spectroscopic ellipsometry of lead zirconate titanate thin films

Applied physics letters, 2005-06, Vol.86 (26), p.262902-262902-3

2005

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Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

Proceedings of the IEEE, 1986, Vol.74 (6), p.773-822

1986

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Nonlinear parasitics in MODFETs and MODFET I-V characteristics

IEEE transactions on electron devices, 1988-08, Vol.35 (8), p.1207-1214

1988

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Comprehensive analysis of Si-doped AlxGa1-xAs (x=0 to 1): theory and experiments

Physical review. B, Condensed matter, 1984, Vol.30 (8), p.4481-4492

1984

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Microwave performance of InAlAs/InGaAs/InP MODFET's

IEEE electron device letters, 1987-01, Vol.8 (1), p.24-26

1987

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Handbook of Nitride Semiconductors and Devices

Nitride Semiconductor Devices: Fundamentals and Applications

Zinc Oxide: Fundamentals, Materials and Device Technology

Luminescence properties of defects in GaN

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Handbook of nitride semiconductors and devices, vol. 3: gan-based optical and electronic devices.

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices

Luminescence of Acceptors in Mg-Doped GaN

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates

Regrowth of ZnO thin film with high surface flatness and enhanced optical properties on annealed buffer layers by rf sputtering deposition

Large electro-optic effect in single-crystal Pb(Zr,Ti)O3 (001) measured by spectroscopic ellipsometry

Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films

GaN resistive hydrogen gas sensors

Dielectric functions and electronic band structure of lead zirconate titanate thin films

Reactive ion etch damage on GaN and its recovery

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/ AlGaN ∕ GaN field effect transistor

Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

Visible-ultraviolet spectroscopic ellipsometry of lead zirconate titanate thin films

Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

Nonlinear parasitics in MODFETs and MODFET I-V characteristics

Comprehensive analysis of Si-doped AlxGa1-xAs (x=0 to 1): theory and experiments

Microwave performance of InAlAs/InGaAs/InP MODFET's

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