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Spectroscopy of flux-driven Kerr parametric oscillators by reflection coefficient measurement

New journal of physics, 2024-04, Vol.26 (4), p.43019

2024

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Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

IEEE journal of solid-state circuits, 2015-02, Vol.50 (2), p.476-489

2015

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10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.184-185

2014

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NanoBridge-Based FPGA in High-Temperature Environments

IEEE MICRO, 2017-09, Vol.37 (5), p.32-42

2017

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Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Architecture optimization of nanobridge-based field-programmable gate array and its evaluation

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CF03

2017

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Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates

Japanese Journal of Applied Physics, 2000-01, Vol.39 (4B), p.L327-L329

2000

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Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2385

2005

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An atom-switch-based field-programmable gate array with optimized driving capability buffer

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBB04

2019

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High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2210

2005

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Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2205

2005

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Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

IEEE transactions on magnetics, 2014-11, Vol.50 (11), p.1-4

2014

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Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.194-195

2013

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A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014, p.1588-1591

2014

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1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2330

2005

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Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO 2 CMOSFETs

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2441

2005

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Atom Switch with Improved Cycle Endurance using Field Enhancement for Nonvolatile SoC

2018 IEEE International Memory Workshop (IMW), 2018, p.1-4

2018

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Architecture of Reconfigurable-Logic Cell Array with Atom Switch: Cluster Size & Routing Fabrics (Abstract Only)

Proceedings of the 2015 ACM/SIGDA International Symposium on Field-Programmable Gate Arrays, 2015, p.269-269

2015

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Low-Power and High-Speed Hf-based gated CMOSFET with Poly-Si Gate Electrode

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-01 (15), p.699-699

2006

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Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop, 2006, p.70-71

2006

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High mobility MISFET with low trapped charge in HfSiO films

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), 2003, p.165-166

2003

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A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes

IEEE International Electron Devices Meeting 2003, 2003, p.27.5.1-27.5.4

2003

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Spectroscopy of flux-driven Kerr parametric oscillators by reflection coefficient measurement

Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

NanoBridge-Based FPGA in High-Temperature Environments

Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

Architecture optimization of nanobridge-based field-programmable gate array and its evaluation

Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates

Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

An atom-switch-based field-programmable gate array with optimized driving capability buffer

High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications

Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO 2 CMOSFETs

Atom Switch with Improved Cycle Endurance using Field Enhancement for Nonvolatile SoC

Architecture of Reconfigurable-Logic Cell Array with Atom Switch: Cluster Size & Routing Fabrics (Abstract Only)

Low-Power and High-Speed Hf-based gated CMOSFET with Poly-Si Gate Electrode

Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention

Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

High mobility MISFET with low trapped charge in HfSiO films

A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes

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