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Numerical study of bimetallic actuated micro-membrane with large deformations

Journal of micromechanics and microengineering, 2013-01, Vol.23 (1), p.15011-9

2013

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Thermal sensors cointegrated within a MEMS thermally actuated ultrathin membrane

Journal of micromechanics and microengineering, 2012-06, Vol.22 (6), p.65029-9

2012

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Low temperature wafer bonding for thin silicon film transfer

Sensors and actuators. A. Physical., 2004-02, Vol.110 (1), p.401-406

2004

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Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction

Microelectronics and reliability, 2020-11, Vol.114, p.113736, Article 113736

2020

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Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors

Electronics letters, 1998-10, Vol.34 (20), p.1977

1998

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Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films

IEEE electron device letters, 1996-08, Vol.17 (8), p.395-397

1996

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Electron mobility increase in submicronic transistors integrated on ultra thin membranes subjected to high mechanical stress

Applied physics letters, 2010-03, Vol.96, p.092107:1-3

2010

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The performance of micro heat pipes measured by integrated sensors

Journal of micromechanics and microengineering, 2006-05, Vol.16 (5), p.1047-1050

2006

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A New Method to Extract Piezoresistive Coefficients in Polysilicon Through Gauges Placed on a MEMS Membrane

Procedia engineering, 2012, Vol.47, p.426-429

2012

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Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

IEEE transactions on electron devices, 1996-05, Vol.43 (5), p.753-758

1996

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Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition

Microelectronic engineering, 1999, Vol.48 (1), p.211-214

1999

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Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation

Solid-state electronics, 1991-12, Vol.34 (12), p.1375-1379

1991

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Electrical properties of oxynitride thin films using noise and charge pumping measurements

Journal of non-crystalline solids, 1999-04, Vol.245 (1), p.54-58

1999

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Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

Review of scientific instruments, 1992, Vol.63 (9), p.4189-4191

1992

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High temperature silicon carbide MOSFETs with very low drain leakage current

Electronics letters, 1994-01, Vol.30 (2), p.170-171

1994

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Electrical Study of Thin SiO2 Layers Obtained by Anodic Oxidation of p-Type Silicon in Pure Water Using I-U, C-U, and G-U Measurements

Physica status solidi. A, Applied research, 1989-02, Vol.111 (2), p.529-539

1989

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Detection of interface and volume traps in very thin oxide MOS structures using DLTS, quasi-static and conductance measurements

Solid-state electronics, 1991-09, Vol.34 (9), p.933-936

1991

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On the mobility of n -channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

Applied physics letters, 1995-01, Vol.66 (1), p.73-75

1995

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Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Solid-state electronics, 1997, Vol.41 (7), p.1051-1055

1997

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High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes

2009 International Semiconductor Conference, 2009, Vol.1, p.93-96

2009

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Microsystèmes (MST/MEMS) : de la simulation à la réalisation technologique et à la caractérisation

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, Vol.4 (HORS SÉRIE 2), p.28

2005

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Fully integrated thermally actuated SOI diaphragm: Design, fabrication & characterization

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), 2012, p.195-198

2012

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Fabrication of silicon micro heat pipes for cooling electronics

Houille blanche, 2003-01 (4), p.82-87

2003

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Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization

2008 14th International Workshop on Thermal Inveatigation of ICs and Systems, 2008, p.173-176

2008

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Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves G p (Va), using the conductance technique

Review of scientific instruments, 1992-09, Vol.63 (9), p.4189-4191

1992

Volltextzugriff (PDF)

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Numerical study of bimetallic actuated micro-membrane with large deformations

Thermal sensors cointegrated within a MEMS thermally actuated ultrathin membrane

Low temperature wafer bonding for thin silicon film transfer

Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction

Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors

Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films

Electron mobility increase in submicronic transistors integrated on ultra thin membranes subjected to high mechanical stress

The performance of micro heat pipes measured by integrated sensors

A New Method to Extract Piezoresistive Coefficients in Polysilicon Through Gauges Placed on a MEMS Membrane

Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition

Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

High temperature silicon carbide MOSFETs with very low drain leakage current

Electrical Study of Thin SiO2 Layers Obtained by Anodic Oxidation of p-Type Silicon in Pure Water Using I-U, C-U, and G-U Measurements

Detection of interface and volume traps in very thin oxide MOS structures using DLTS, quasi-static and conductance measurements

On the mobility of n -channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes

Microsystèmes (MST/MEMS) : de la simulation à la réalisation technologique et à la caractérisation

Fully integrated thermally actuated SOI diaphragm: Design, fabrication & characterization

Fabrication of silicon micro heat pipes for cooling electronics

Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization

Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves G p (Va), using the conductance technique

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