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Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells

Solar energy, 2020-11, Vol.211, p.613-621

2020

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Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Thin solid films, 2005-12, Vol.493 (1-2), p.30-34

2005

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Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A249-A252

2003

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Reduction of the effects of InGaAs alloy disorder by using [formula omitted] superlattices as the conduction channel in modulation-doped heterostructures

Solid state communications, 1996, Vol.97 (1), p.11-15

1996

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Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers

Surface science, 2001, Vol.482, p.836-839

2001

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Magnetoluminescence of InAs self-assembled dots embedded in a two-dimensional electron gas

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.295-301

2001

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Hall effect in InAs/GaAs superlattices with quantum dots: identifying the presence of deep level defects

Brazilian journal of physics, 2004-06, Vol.34 (2b), p.626-628

2004

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Influence of Te on the morphology of InAs self-assembled nanocrystals

Journal of crystal growth, 1999-05, Vol.201, p.1172-1175

1999

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Magneto-optical oscillations in the photoluminescence of quantum wells and the resonant polaron effect

Physica. B, Condensed matter, 1998-12, Vol.256-258, p.367-370

1998

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Pressure Effect Inducing a Larger 1D Character in High Index (311)A Oriented Quantum Wells

physica status solidi (b), 1999-01, Vol.211 (1), p.519-523

1999

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Exploiting interface form birefringence in vertical microcavities

Microelectronic engineering, 1998-08, Vol.43-44, p.605-610

1998

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SXS and XPS study of the adsorption and desorption of Te on GaAs (100)

Brazilian journal of physics, 1999-12, Vol.29 (4), p.790-792

1999

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Impurity breakdown in GaAs samples grown by molecular beam Epitaxy

Brazilian journal of physics, 1999-12, Vol.29 (4), p.793-796

1999

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Temperature dependence of the equilibrium Hall concentration in silicon planar-doped GaAs samples

Solid state communications, 1996, Vol.98 (12), p.1063-1068

1996

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Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels

Superlattices and microstructures, 1998-05, Vol.23 (5), p.1019-1025

1998

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Oscillatory behavior of magneto-optical interband emissions in asymmetric quantum well structures

Superlattices and microstructures, 1997-01, Vol.21 (4), p.591-595

1997

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Evidence for the co-existence of two- and three-dimensional electron gases in the emitter of double barrier devices

Superlattices and microstructures, 1996-01, Vol.20 (2), p.181-186

1996

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Rabi Splitting in a Microcavity Grown on a

EQEC'96. 1996 European Quantum Electronic Conference, 1996, p.219-219

1996

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Temperature tuning of exciton–photon coupling in a microcavity grown on a (311)A GaAs substrate

Superlattices and microstructures, 1998-01, Vol.23 (1), p.181-186

1998

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Towards the abatement of environmental mercury pollution: An electrochemical characterization

Colloids and surfaces. A, Physicochemical and engineering aspects, 2006-03, Vol.276 (1), p.213-220

2006

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Biosorption of copper ions by dried leaves: chemical bonds and site symmetry

Hydrometallurgy, 2003-10, Vol.71 (1), p.277-283

2003

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Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells

Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping

Reduction of the effects of InGaAs alloy disorder by using [formula omitted] superlattices as the conduction channel in modulation-doped heterostructures

Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers

Magnetoluminescence of InAs self-assembled dots embedded in a two-dimensional electron gas

Hall effect in InAs/GaAs superlattices with quantum dots: identifying the presence of deep level defects

Influence of Te on the morphology of InAs self-assembled nanocrystals

Magneto-optical oscillations in the photoluminescence of quantum wells and the resonant polaron effect

Pressure Effect Inducing a Larger 1D Character in High Index (311)A Oriented Quantum Wells

Exploiting interface form birefringence in vertical microcavities

SXS and XPS study of the adsorption and desorption of Te on GaAs (100)

Impurity breakdown in GaAs samples grown by molecular beam Epitaxy

Temperature dependence of the equilibrium Hall concentration in silicon planar-doped GaAs samples

Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels

Oscillatory behavior of magneto-optical interband emissions in asymmetric quantum well structures

Evidence for the co-existence of two- and three-dimensional electron gases in the emitter of double barrier devices

Rabi Splitting in a Microcavity Grown on a

Temperature tuning of exciton–photon coupling in a microcavity grown on a (311)A GaAs substrate

Towards the abatement of environmental mercury pollution: An electrochemical characterization

Biosorption of copper ions by dried leaves: chemical bonds and site symmetry

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