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Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells

Solar energy, 2020-11, Vol.211, p.613-621

2020

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Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Journal of nanomaterials, 2016-01, Vol.2016 (2016), p.1-5

2016

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Linear and Nonlinear Optical Properties of Single GaAs Nanowires with Polytypism

Journal of physical chemistry. C, 2016-08, Vol.120 (30), p.17046-17051

2016

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Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy

Journal of physical chemistry. C, 2019-05, Vol.123 (20), p.12807-12812

2019

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Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure

Nanoscale, 2018-02, Vol.10 (8), p.3697-3708

2018

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Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

Journal of applied physics, 2013-11, Vol.114 (18)

2013

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Electronic transport in p-type Mg-doped GaAs nanowires

Physica Status Solidi. B: Basic Solid State Physics, 2016-10, Vol.253 (10), p.1960-1964

2016

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Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

Semiconductor science and technology, 2006-12, Vol.21 (12), p.1681-1685

2006

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Experimental Evidence and Modified Growth Model of Alloying in InxGa1―xAs Nanowires

Journal of physical chemistry. C, 2012-11, Vol.116 (46), p.24777-24783

2012

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Direct Evidences of Enhanced Ga Interdiffusion in InAs Vertically Aligned Free-Standing Nanowires

Journal of nanoscience and nanotechnology, 2009-08, Vol.9 (8), p.4673-4678

2009

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Low frequency oscillations in semi-insulating GaAs: A nonlinear analysis

Chaos (Woodbury, N.Y.), 2003-06, Vol.13 (2), p.457-466

2003

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Identification and quantification of iron silicide phases in thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1138-1148

2008

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Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Thin solid films, 2005-12, Vol.493 (1-2), p.30-34

2005

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Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A249-A252

2003

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Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structureElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr08395e

2018-02

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Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots

Applied physics letters, 1998-04, Vol.72 (14), p.1712-1714

1998

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Exciton polariton emission from a resonantly excited GaAs microcavity

Brazilian journal of physics, 2004-12, Vol.34 (4a), p.1473-1477

2004

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X-ray scattering from self-assembled InAs islands

Brazilian journal of physics, 2004-06, Vol.34 (2b), p.571-576

2004

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Experimental Evidence and Modified Growth Model of Alloying in In x Ga 1– x As Nanowires

Journal of physical chemistry. C, 2012-11, Vol.116 (46), p.24777-24783

2012

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Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), Article 113403

2010

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Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots

Applied physics letters, 1997-07, Vol.71 (4), p.521-523

1997

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On the Ga interdiffusion in InAs free-standing nanowires grown by molecular beam epitaxy

AIP conference proceedings, 2012-11, Vol.1399 (1)

2012

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Controlling chaos with magnetic field in semi-insulating GaAs

Physical review. B, Condensed matter and materials physics, 2007-10, Vol.76 (15), Article 155206

2007

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Temperature dependence of the equilibrium Hall concentration in silicon planar-doped GaAs samples

Solid state communications, 1996, Vol.98 (12), p.1063-1068

1996

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Blockade of free carriers by hopping carriers leading to the low-frequency current oscillations in semi-insulating GaAs

Physical review. B, Condensed matter and materials physics, 2006-07, Vol.74 (3), Article 035204

2006

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Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells

Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Linear and Nonlinear Optical Properties of Single GaAs Nanowires with Polytypism

Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy

Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure

Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

Electronic transport in p-type Mg-doped GaAs nanowires

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

Experimental Evidence and Modified Growth Model of Alloying in InxGa1―xAs Nanowires

Direct Evidences of Enhanced Ga Interdiffusion in InAs Vertically Aligned Free-Standing Nanowires

Low frequency oscillations in semi-insulating GaAs: A nonlinear analysis

Identification and quantification of iron silicide phases in thin films

Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping

Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structureElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr08395e

Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots

Exciton polariton emission from a resonantly excited GaAs microcavity

X-ray scattering from self-assembled InAs islands

Experimental Evidence and Modified Growth Model of Alloying in In x Ga 1– x As Nanowires

Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)

Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots

On the Ga interdiffusion in InAs free-standing nanowires grown by molecular beam epitaxy

Controlling chaos with magnetic field in semi-insulating GaAs

Temperature dependence of the equilibrium Hall concentration in silicon planar-doped GaAs samples

Blockade of free carriers by hopping carriers leading to the low-frequency current oscillations in semi-insulating GaAs

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