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ScGaN and ScAlN: emerging nitride materials

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-01, Vol.2 (17), p.6042-6050

2014

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Elastic constants and critical thicknesses of ScGaN and ScAlN

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems

Water research (Oxford), 2014-12, Vol.66, p.338-349

2014

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Mg doping affects dislocation core structures in GaN

Physical review letters, 2013-07, Vol.111 (2), p.025502-025502, Article 025502

2013

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X-ray diffraction of III-nitrides

Reports on progress in physics, 2009-03, Vol.72 (3), p.036502-036502 (40)

2009

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On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors

The Journal of chemical physics, 2015-10, Vol.143 (14), p.144104-144104

2015

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Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers

Journal of crystal growth, 2009-06, Vol.311 (12), p.3239-3242

2009

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The dissociation of the [a + c] dislocation in GaN

Philosophical magazine (Abingdon, England), 2013-09, Vol.93 (28-30), p.3925-3938

2013

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Elastic constants of the II-IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2

Journal of physics. D, Applied physics, 2018-08, Vol.51 (37)

2018

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Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy

Journal of physics. D, Applied physics, 2010-02, Vol.43 (5), p.055303

2010

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The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films

Journal of physics. D, Applied physics, 2009-07, Vol.42 (13), p.135407-135407p4

2009

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Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire

Journal of crystal growth, 2010-01, Vol.312 (3), p.363-367

2010

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On the thermal expansion in MgSiN2

Journal of physics. D, Applied physics, 2018-02, Vol.51 (10)

2018

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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

Journal of crystal growth, 2007-10, Vol.308 (2), p.302-308

2007

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Defect reduction processes in heteroepitaxial non-polar a-plane GaN films

Journal of crystal growth, 2011-12, Vol.337 (1), p.81-86

2011

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Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Journal of crystal growth, 2008-05, Vol.310 (11), p.2746-2750

2008

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Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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Understanding x-ray diffraction of nonpolar gallium nitride films

Journal of applied physics, 2009-06, Vol.105 (11), p.113501-113501-7

2009

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Growth of low dislocation density GaN using transition metal nitride masking layers

Journal of crystal growth, 2007, Vol.298, p.268-271

2007

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Microstructure of epitaxial scandium nitride films grown on silicon

Applied surface science, 2006-10, Vol.252 (24), p.8385-8387

2006

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The effects of Si doping on dislocation movement and tensile stress in GaN films

Journal of applied physics, 2011-04, Vol.109 (7), p.073509-073509-7

2011

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Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.2054-2057

2009

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A dissociation mechanism for the [a+c] dislocation in GaN

Journal of physics. Conference series, 2014-06, Vol.522 (1), p.12037-4

2014

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The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

Journal of electronic materials, 2010-06, Vol.39 (6), p.656-662

2010

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Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction

Physica. B, Condensed matter, 2009-08, Vol.404 (16), p.2189-2191

2009

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ScGaN and ScAlN: emerging nitride materials

Elastic constants and critical thicknesses of ScGaN and ScAlN

Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems

Mg doping affects dislocation core structures in GaN

X-ray diffraction of III-nitrides

On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors

Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers

The dissociation of the [a + c] dislocation in GaN

Elastic constants of the II-IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2

Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy

The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films

Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire

On the thermal expansion in MgSiN2

Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

Defect reduction processes in heteroepitaxial non-polar a-plane GaN films

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2

Understanding x-ray diffraction of nonpolar gallium nitride films

Growth of low dislocation density GaN using transition metal nitride masking layers

Microstructure of epitaxial scandium nitride films grown on silicon

The effects of Si doping on dislocation movement and tensile stress in GaN films

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

A dissociation mechanism for the [a+c] dislocation in GaN

The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction

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