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Ion dose and anneal temperature dependent studies of silicon implanted AlₓGa₁₋ₓN

Current Applied Physics, 2012, 12(1), , pp.123-128

2012

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Computational modeling of the defect structure, hyperfine and magnetic properties of the Mn2+-doped magnetite of the composition Mn Fe3-O4 (y = ⅔ x)

Materials research bulletin, 2023-03, Vol.159, p.112095, Article 112095

2023

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Assessing UO2 sample quality with μ-Raman spectroscopy

Journal of nuclear materials, 2019-02, Vol.514, p.1-11

2019

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Computational modeling of the defect structure, hyperfine and magnetic properties of the Mn2+-doped magnetite of the composition MnxFe3-yO4 (y = ⅔ x)

Materials research bulletin, 2023-03, Vol.159, Article 112095

2023

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Inhibiting laser oxidation of UO2 via Th substitution

Journal of nuclear materials, 2019-04, Vol.517 (C), p.254-262

2019

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Structural, 57Fe Mössbauer and XPS studies of mechanosynthesized nanocrystalline Nd0.33Eu0.67Fe1-xCrxO3 particles

Materials research bulletin, 2020-12, Vol.132, Article 111004

2020

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Structural, 57Fe Mössbauer and XPS studies of mechanosynthesized nanocrystalline Nd0.33Eu0.67Fe1-Cr O3 particles

Materials research bulletin, 2020-12, Vol.132, p.111004, Article 111004

2020

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Fluorinated perovskite as magnetic spin-polarised semiconductor

Solid state communications, 2019-06, Vol.294, p.39-42

2019

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Ion dose and anneal temperature dependent studies of silicon implanted Al xGa 1−xN

Current applied physics, 2012, Vol.12 (1), p.123-128

2012

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Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing

Journal of electronic materials, 2015-10, Vol.44 (10), p.3259-3264

2015

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Atomistic simulation and ab initio study of the defect structure of spinel-related Li0.5−0.5xMgxFe2.5−0.5xO4

Materials research bulletin, 2012-12, Vol.47 (12), p.3995-4000

2012

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Atomistic simulation and ab initio study of the defect structure of spinel-related Li{sub 0.5−0.5x}Mg{sub x}Fe{sub 2.5−0.5x}O{sub 4}

Materials research bulletin, 2012-12, Vol.47 (12)

2012

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Iron(III) as a defect in diantimony tetroxide

Materials research bulletin, 2008-08, Vol.43 (8), p.2361-2367

2008

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Absolute [formula omitted] shielding in dinitrogen trioxide: recalculation of the shielding tensors

Chemical physics letters, 2000-02, Vol.317 (3), p.360-364

Moore, E.A

2000

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Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Journal of electronic materials, 2009-01, Vol.38 (1), p.153-158

2009

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Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted AlxGa1−xN with High Aluminum Mole Fraction

Journal of electronic materials, 2009, Vol.38 (1), p.153-158

2009

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Magnetic order in tin-doped thiospinels

Materials chemistry and physics, 2009-02, Vol.113 (2), p.714-716

2009

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Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times

Journal of electronic materials, 2010, Vol.39 (1), p.21-28

2010

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Molecular modelling and bonding

Moore, Elane

1, 2007

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Chemical Modelling: Applications and Theory Volume 5

1, 2008

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Defect clusters in titanium-substituted spinel-related lithium ferrite

The Journal of physics and chemistry of solids, 2004-10, Vol.65 (10), p.1663-1667

2004

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Metal-ligand bonding

1, 2007

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Integrin Expression, Enterocyte Maturation, and Bacterial Internalization

The Journal of surgical research, 2001-06, Vol.98 (2), p.116-122

2001

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Investigation of defect structures formed by doping tetravalent ions into inverse spinel-related iron oxides using atomistic simulation calculations

The Journal of physics and chemistry of solids, 2001-07, Vol.62 (7), p.1277-1284

2001

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An ab initio study of the effect on the 29Si NMR chemical shift of dihydroxysilane of geometry changes expected on approach to a surface

Chemical physics letters, 1996, Vol.248 (3), p.173-178

1996

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Ion dose and anneal temperature dependent studies of silicon implanted AlₓGa₁₋ₓN

Computational modeling of the defect structure, hyperfine and magnetic properties of the Mn2+-doped magnetite of the composition Mn Fe3-O4 (y = ⅔ x)

Assessing UO2 sample quality with μ-Raman spectroscopy

Computational modeling of the defect structure, hyperfine and magnetic properties of the Mn2+-doped magnetite of the composition MnxFe3-yO4 (y = ⅔ x)

Inhibiting laser oxidation of UO2 via Th substitution

Structural, 57Fe Mössbauer and XPS studies of mechanosynthesized nanocrystalline Nd0.33Eu0.67Fe1-xCrxO3 particles

Structural, 57Fe Mössbauer and XPS studies of mechanosynthesized nanocrystalline Nd0.33Eu0.67Fe1-Cr O3 particles

Fluorinated perovskite as magnetic spin-polarised semiconductor

Ion dose and anneal temperature dependent studies of silicon implanted Al xGa 1−xN

Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing

Atomistic simulation and ab initio study of the defect structure of spinel-related Li0.5−0.5xMgxFe2.5−0.5xO4

Atomistic simulation and ab initio study of the defect structure of spinel-related Li{sub 0.5−0.5x}Mg{sub x}Fe{sub 2.5−0.5x}O{sub 4}

Iron(III) as a defect in diantimony tetroxide

Absolute [formula omitted] shielding in dinitrogen trioxide: recalculation of the shielding tensors

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted AlxGa1−xN with High Aluminum Mole Fraction

Magnetic order in tin-doped thiospinels

Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times

Molecular modelling and bonding

Chemical Modelling: Applications and Theory Volume 5

Defect clusters in titanium-substituted spinel-related lithium ferrite

Metal-ligand bonding

Integrin Expression, Enterocyte Maturation, and Bacterial Internalization

Investigation of defect structures formed by doping tetravalent ions into inverse spinel-related iron oxides using atomistic simulation calculations

An ab initio study of the effect on the 29Si NMR chemical shift of dihydroxysilane of geometry changes expected on approach to a surface

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