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Strain relaxation of semiconductor membranes: insights from finite element modeling

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35026

Mooney, P M

2023

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Controllable valley splitting in silicon quantum devices

Nature physics, 2007-01, Vol.3 (1), p.41-45

2007

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Deep donor levels (DX centers) in III-V semiconductors

Journal of applied physics, 1990-02, Vol.67 (3), p.R1-R26

MOONEY, P. M

1990

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Craniofacial Morphology in Myostatin-deficient Mice

Journal of dental research, 2007-11, Vol.86 (11), p.1068-1072

2007

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Mechanism of phosphorus passivation of near-interface oxide traps in 4H-SiC MOS devices investigated by CCDLTS and DFT calculation

Semiconductor science and technology, 2018-06, Vol.33 (6), p.65005

2018

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Randomized trial of two physiotherapy interventions for primary care neck and back pain patients : 'McKenzie' vs brief physiotherapy pain management

Rheumatology (Oxford, England), 2006-12, Vol.45 (12), p.1514-1521

2006

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Deep level defects in GaAs1−xBix/GaAs heterostructures

Semiconductor science and technology, 2011-05, Vol.26 (5), p.055020

2011

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Randomized trial of two physiotherapy interventions for primary care back and neck pain patients: cost–effectiveness analysis

Rheumatology (Oxford, England), 2007-09, Vol.46 (9), p.1495-1501

2007

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Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Journal of applied physics, 2011-03, Vol.109 (6)

2011

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Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Journal of applied physics, 2013-04, Vol.113 (13)

2013

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Oral Sciences PhD Program Enrollment, Graduates, and Placement: 1994 to 2016

Journal of dental research, 2018-05, Vol.97 (5), p.483-491

2018

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Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

Semiconductor science and technology, 2016-07, Vol.31 (8), p.85014

2016

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Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

Journal of applied physics, 2011-06, Vol.109 (11), p.114505-114505-8

2011

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Effect of annealing on the structural and optical properties of heavily carbon-doped ZnO

Semiconductor science and technology, 2010-04, Vol.25 (4), p.045023-045023

2010

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In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035011-035011 (5)

2009

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces

Journal of applied physics, 2012-05, Vol.111 (9)

2012

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Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures

Semiconductor science and technology, 2016-06, Vol.31 (6), p.65007

2016

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The effects of guided tissue regeneration (GTR) on modified Le Fort I osteotomy healing in rabbits

International journal of oral and maxillofacial surgery, 2005-09, Vol.34 (6), p.650-655

2005

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Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

Applied physics letters, 2004-05, Vol.84 (20), p.4047-4049

2004

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Relationship of Premaxillary Bone and Its Sutures to Deciduous Dentition in Nonhuman Primates

The Cleft palate-craniofacial journal, 2008-01, Vol.45 (1), p.93-100

2008

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Ultrashallow defect states at SiO2∕4H–SiC interfaces

Applied physics letters, 2008-03, Vol.92 (10)

2008

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Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Applied physics letters, 2001-10, Vol.79 (14), p.2148-2150

2001

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The effects of testosterone on craniosynostotic calvarial cells: a test of the gene/environmental model of craniofacial anomalies

Orthodontics & craniofacial research, 2011-08, Vol.14 (3), p.149-155

2011

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Strain relaxation of semiconductor membranes: insights from finite element modeling

Controllable valley splitting in silicon quantum devices

Deep donor levels (DX centers) in III-V semiconductors

Craniofacial Morphology in Myostatin-deficient Mice

Mechanism of phosphorus passivation of near-interface oxide traps in 4H-SiC MOS devices investigated by CCDLTS and DFT calculation

Randomized trial of two physiotherapy interventions for primary care neck and back pain patients : 'McKenzie' vs brief physiotherapy pain management

Deep level defects in GaAs1−xBix/GaAs heterostructures

Randomized trial of two physiotherapy interventions for primary care back and neck pain patients: cost–effectiveness analysis

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Oral Sciences PhD Program Enrollment, Graduates, and Placement: 1994 to 2016

Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

Effect of annealing on the structural and optical properties of heavily carbon-doped ZnO

In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)

Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces

Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures

The effects of guided tissue regeneration (GTR) on modified Le Fort I osteotomy healing in rabbits

Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

Relationship of Premaxillary Bone and Its Sutures to Deciduous Dentition in Nonhuman Primates

Ultrashallow defect states at SiO2∕4H–SiC interfaces

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

The effects of testosterone on craniosynostotic calvarial cells: a test of the gene/environmental model of craniofacial anomalies

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